TSML1000, TSML1020, TSML1030, TSML1040 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES TSML1000 TSML1020 Package type: surface mount Package form: GW, RGW, yoke, axial Dimensions (L x W x H in mm): 2.5 x 2 x 2.7 TSML1030 Peak wavelength: = 940 nm p High radiant power High radiant intensity Angle of half intensity: = 12 TSML1040 Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors 16852 Versatile terminal configurations Package matches with detector TEMT1000 Floor life: 168 h, MSL 3, acc. J-STD-020 Material categorization: For definitions of compliance DESCRIPTION please see www.vishay.com/doc 99912 TSML1000 is an infrared, 940 nm emitting diode in GaAlAs APPLICATIONS multi quantum well (MQW) technology with high radiant power and high speed molded in a clear, untinted plastic For remote control package (with lens) for surface mounting (SMD). Punched tape readers Encoder Photointerrupters PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e P r TSML1000 11 12 940 15 TSML1020 11 12 940 15 TSML1030 11 12 940 15 TSML1040 11 12 940 15 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSML1000 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Reverse gullwing TSML1020 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Gullwing TSML1030 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Yoke TSML1040 Bulk MOQ: 1000 pcs, 1000 pcs/bulk Axial leads Note MOQ: minimum order quantity Rev. 2.1, 13-Mar-14 Document Number: 81033 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TSML1000, TSML1020, TSML1030, TSML1040 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 1.0 A p FSM Power dissipation P 190 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature t 5 s T < 260 C sd Soldered on PCB, pad dimensions: Thermal resistance junction/ambient R 400 C thJA 4 mm x 4 mm 200 120 180 100 160 140 80 120 60 100 80 40 60 40 20 20 0 0 0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 50 60 70 80 90 100 40 16188 T - Ambient Temperature (C) 16187 T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 20 mA, t = 20 ms V 1.2 1.5 V F p F Forward voltage I = 1 A, t = 100 s V 2.2 V F p F Temperature coefficient of V I = 1 mA TK -1.8 mV/K F F VF Reverse current V = 5 V I 10 A R R Junction capacitance V = 0 V, f = 1 MHz, E = 0 C 40 pF R j Radiant intensity I = 20 mA, t = 20 ms I 311 15 mW/sr F p e Radiant power I = 100 mA, t = 20 ms 40 mW F p e Temperature coefficient of I = 20 mA TK -0.6 %/K e F e Angle of half intensity 12 deg Peak wavelength I = 100 mA 940 nm F p Spectral bandwidth I = 100 mA 30 nm F Temperature coefficient of I = 100 mA TK 0.2 nm/K p F p Rise time I = 100 mA t 15 ns F r Fall time I = 100 mA t 15 ns F f Rev. 2.1, 13-Mar-14 Document Number: 81033 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F