TSMP1138 Vishay

333 3 TSMP1138 www.vishay.com Vishay Semiconductors IR Sensor Module for Remote Control Systems FEATURES Photo detector and preamplifier in one package AC coupled response from 30 kHz to 60 kHz, all data formats If the IR signal strength is more then 500 mW/m2 (distance less than 0.5 m with a typical IR remote control), the frequency range is limited to 55 kHz Improved shielding against electrical field 1 disturbance 2 94 8691 3 AGC to suppress ambient noise High sensitivity, long receiving range ADDITIONAL RESOURCES Supply voltage: 2.5 V to 5.5 V Carrier out signal for IR repeater applications 3D Models Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 MECHANICAL DATA DESCRIPTION Pinning: The TSMP1138 is a miniaturized sensor for receiving the 1 = GND, 2 = Carrier OUT, 3 = V S modulated signal of infrared remote control systems. A PIN diode and preamplifier are assembled on a lead frame, the epoxy package is designed as an IR filter. The modulate d output signal, carrier out, can be used for repeater applications and code learning applications. This component has not been qualified according to automotive specifications. PARTS TABLE Carrier frequency 38 kHz TSMP1138 Package Cast Pinning 1 = GND, 2 = carrier OUT, 3 = V S Dimensions (mm) 10.0 W x 12.5 H x 5.8 D Mounting Leaded Application Repeater BLOCK DIAGRAM APPLICATION CIRCUIT Supply 680 TSAL6400 16833 11 voltage TSMPxxxxx 3 +3 V or +5 V 100 1 F V S 47 F 33 k 33 k 2 OUT Band Compa- Input AGC 3 pass rator GND 1 0 V In case of a supply voltage of 3 V, use one IR emitter only PIN Control circuit GND Recommended circuit for best sensitivity in repeater applications. It limits the output voltage swing V to about 0.7 V in order to avoid internal coupling. O Rev. 1.5, 23-Apr-2019 Document Number: 82484 1 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D TSMP1138 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Supply voltage (pin 3) V -0.3 to +6 V S Supply current (pin 3) I 5mA S Output voltage (pin 2) V -0.3 to 5.5 V O Voltage at output to supply V - V -0.3 to (V + 0.3) V S O S Output current (pin 2) I 5mA O Junction temperature T 100 C j Storage temperature range T -25 to +85 C stg Operating temperature range T -25 to +85 C amb Power consumption T 85 C P 10 mW amb tot Soldering temperature t 10 s, 1 mm from case T 260 C sd Note Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating onl y and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specificatio n is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability ELECTRICAL AND OPTICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT E = 0, V = 5 V I 0.55 0.7 0.9 mA v S SD Supply current (pin 3) E = 40 klx, sunlight I -0.8 - mA v SH Supply voltage V 2.5 - 5.5 V S E = 0, test signal see Fig. 1, v Transmission distance IR diode TSAL6200, d- 10 - m I = 50 mA F 2 I = 0.5 mA, E = 0.7 mW/m , OSL e Output voltage low (pin 2) V - - 100 mV OSL test signal see Fig. 1 Less than 5 missing or 5 additional 2 Minimum irradiance sub carrier pulses related to one E -0.5 1 mW/m e min. burst Less than 5 missing or 5 additional 2 Maximum irradiance sub carrier pulses related to one E 30 - - W/m e max. burst Angle of half transmission Directivity - 55 - deg 1/2 distance TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb Optical Test Signal: 3.5 IR diode TSAL6200, I = 0.25 A, F E N = 15 carrier pulses per burst, f = 38 kHz, e burst repetition time: 3 ms 3.0 2.5 2.0 t t - burst length 1.5 pi V O tpi 6 carrier cycles is recommended for optimum function 1.0 V OH 0.5 0 V OL 30 35 40 45 50 55 60 t The number of carrier- out-pulses might not be exactly 21772 21648 f - Carrier Frequency (kHz) 0 same as the number of carrier cycles in t (input burst) pi Fig. 1 - Output Function Fig. 2 - Frequency Dependence of Sensitivity Rev. 1.5, 23-Apr-2019 Document Number: 82484 2 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 E - Detection Threshold (mW/m) e min.