End of Life May-2021 - Alternative Device: TSAL6400 TSUS5400, TSUS5401, TSUS5402 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES Package type: leaded Package form: T-1 Dimensions (in mm): 5 Leads with stand-off Peak wavelength: = 950 nm p High reliability Angle of half intensity: = 22 Low forward voltage Suitable for high pulse current operation 94 8390 Good spectral matching with Si photodetectors Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION APPLICATIONS TSUS5400 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package. Infrared remote control and free air transmission systems with low forward voltage and small package requirements Emitter in transmissive sensors Emitter in reflective sensors PRODUCT SUMMARY COMPONENT I (mW/sr) () (nm) t (ns) e p r TSUS5400 14 22 950 800 TSUS5401 17 22 950 800 TSUS5402 20 22 950 800 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSUS5400 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1 TSUS5401 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1 TSUS5402 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 150 mA F Peak forward current t /T = 0.5, t = 100 s I 300 mA p p FM Surge forward current t = 100 s I 2.5 A p FSM Power dissipation P 170 mW V Junction temperature T 100 C j Operating temperature range T - 40 to + 85 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 5 s, 2 mm from case T 260 C sd Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB R 230 K/W thJA Rev. 1.9, 29-Jan-2021 Document Number: 81056 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000End of Life May-2021 - Alternative Device: TSAL6400 TSUS5400, TSUS5401, TSUS5402 www.vishay.com Vishay Semiconductors 180 120 160 100 140 120 80 100 60 80 R = 230 K/W thJA R = 230 K/W thJA 60 40 40 20 20 0 0 0 1020 3040506070 8090100 0 10 203040 50607080 90 100 T - Ambient Temperature (C) 21313 amb 21314 T - Ambient Temperature (C) amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 100 mA, t = 20 ms V 1.3 1.7 V F p F Temperature coefficient of V I = 100 mA TK - 1.3 mV/K F F VF Reverse current V = 5 V I 100 A R R Junction capacitance V = 0 V, f = 1 MHz, E = 0 C 30 pF R j Temperature coefficient of I = 20 mA TK - 0.8 %/K e F e Angle of half intensity 22 Peak wavelength I = 100 mA 950 nm F p Spectral bandwidth I = 100 mA 50 nm F Temperature coefficient of I = 100 mA TK 0.2 nm/K p F p I = 100 mA t 800 ns F r Rise time I = 1.5 A t 400 ns F r I = 100 mA t 800 ns F f Fall time I = 1.5 A t 400 ns F f Virtual source diameter d2.9 mm TYPE DEDICATED CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT TSUS5400 V 2.2 3.4 V F Forward voltage I = 1.5 A, t = 100 s TSUS5401 V 2.2 3.4 V F p F TSUS5402 V 2.2 2.7 V F TSUS5400 I 714 35 mW/sr e I = 100 mA, t = 20 ms TSUS5401 I 10 17 35 mW/sr F p e TSUS5402 I 15 20 35 mW/sr e Radiant intensity TSUS5400 I 60 140 mW/sr e I = 1.5 A, t = 100 s TSUS5401 I 85 160 mW/sr F p e TSUS5402 I 120 190 mW/sr e TSUS5400 13 mW e Radiant power I = 100 mA, t = 20 ms TSUS5401 14 mW F p e TSUS5402 15 mW e Rev. 1.9, 29-Jan-2021 Document Number: 81056 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F