New Product U1B, U1C & U1D Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES Oxide planar chip junction Ultrafast recovery time Low forward voltage, low power losses High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Solder dip 260 C, 40 s DO-214AC (SMA) Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching power supplies, freewheeling diodes, PRIMARY CHARACTERISTICS dc-to-dc converters or polarity protection application. I 1.0 A F(AV) V 100 V, 150 V, 200 V RRM I 30 A MECHANICAL DATA FSM t 15 ns rr Case: DO-214AC (SMA) V at I = 1.0 A 0.76 V F F Epoxy meets UL 94V-0 flammability rating T max. 150 C J Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL U1BU1CU1DUNIT Device marking code U1B U1C U1D Maximum repetitive peak reverse voltage V 100 150 200 V RRM Maximum average forward rectified current (Fig. 1) I 1.0 A F(AV) Peak forward surge current 8.3 ms single half sine-wave I 30 A FSM superimposed on rated load Operating junction and storage temperature range T , T - 55 to + 150 C J STG Document Number: 89065 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 13-May-08 PDD-Americas vishay.com, PDD-Asia vishay.com, PDD-Europe vishay.com 1New Product U1B, U1C & U1D Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONSSYMBOL TYP.MAX.UNIT I = 0.6 A 0.82 0.87 F T = 25 C A I = 1.0 A 0.87 0.92 F (1) Instantaneous forward voltage V V F I = 0.6 A 0.71 0.78 F T = 100 C A I = 1.0 A 0.76 0.84 F T = 25 C - 5.0 (2) A Reverse current rated V I A R R T = 100 C 55 100 A I = 0.5 A, I = 1.0 A, F R T = 25 C t -15 ns A rr I = 0.25 A rr Reverse recovery time I = 0.6 A, dI/dt = 50 A/s, T = 25 C 24 - F A t ns rr V = 30 V, I = 0.1 I T = 100 C 29 - R rr RM A I = 0.6 A, dI/dt = 50 A/s, T = 25 C 7 - F A Storage charge Q nC rr V = 30 V, I = 0.1 I T = 100 C 13 - R rr RM A Typical junction capacitance 4.0 V, 1 MHz C 6.8 - pF J Notes: (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL U1B U1C U1D UNIT R 115 (1) JA Typical thermal resistance C/W R 22 JM Note: (1) Free air, mounted on recommended copper pad area ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE U1D-E3/61T 0.064 61T 1800 7 diameter plastic tape and reel U1D-E3/5AT 0.064 5AT 7500 13 diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 1.2 1.0 D = 0.8 D = 0.5 1.0 D = 0.3 0.8 D = 0.2 D = 1.0 0.8 D = 0.1 0.6 0.6 0.4 T 0.4 0.2 0.2 D = t /T t p p 0 0 80 90 100 110 120 130 140 150 0 0.2 0.4 0.6 0.8 1.0 1.2 T - Mount Temperature (C) Average Forward Current (A) M Figure 1. Forward Derating Curve Figure 2. Forward Power Loss Characteristics www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 89065 PDD-Americas vishay.com, PDD-Asia vishay.com, PDD-Europe vishay.com Revision: 13-May-08 2 Average Forward Current (A) Average Power Loss (W)