UFB200FA20P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 240 A FEATURES Two fully independent diodes Ceramic fully insulated package (V = 2500 V ) ISOL AC Ultrafast reverse recovery Ultrasoft reverse recovery current shape Low forward voltage SOT-227 Optimized for power conversion: welding and industrial SMPS applications Industry standard outline Plug-in compatible with other SOT-227 packages Easy to assemble Direct mounting to heatsink UL approved file E78996 Compliant to RoHS directive 2002/95/EC Designed and qualified for industrial level DESCRIPTION The UFB200FA20P insulated modules integrate two state PRODUCT SUMMARY of the art ultrafast recovery rectifiers in the compact, V 200 V R industry standard SOT-227 package. The planar structure I at T = 90 C 240 A F(AV) C of the diodes, and the platinum doping life time control, provide a ultrasoft recovery current shape, together with t 45 ns rr the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, dc-to-dc converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/RFI. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Cathode to anode voltage V 200 V R Continuous forward current per diode I T = 90 C 120 F C A Single pulse forward current per diode I T = 25 C 1700 FSM C Maximum power dissipation per module P T = 90 C 240 W D C RMS isolation voltage V Any terminal to case, t = 1 minute 2500 V ISOL Operating junction and storage temperatures T , T - 55 to 150 C J Stg Document Number: 94087 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 21-Jul-10 DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com 1 UFB200FA20P Insulated Ultrafast Vishay Semiconductors Rectifier Module, 240 A ELECTRICAL SPECIFICATIONS PER DIODE (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode breakdown voltage V I = 100 A 200 - - BR R I = 120 A - - 1.1 V F Forward voltage V FM I = 120 A, T = 150 C - - 0.95 F J V = V rated - - 50 A R R Reverse leakage current I RM T = 150 C, V = V rated - - 2 mA J R R Junction capacitance C V = 200 V - 200 - pF T R DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 200 A/s, V = 30 V - - 45 F F R Reverse recovery time t T = 25 C -34 - ns rr J T = 125 C - 58 - J I = 150 A F T = 25 C - 5.1 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 10.3 - J V = 160 V R T = 25 C - 87 - J Reverse recovery charge Q nC rr T = 125 C - 300 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Junction to case, single leg conducting -- 0.5 R thJC Junction to case, both leg conducting - - 0.25 C/W Case to heatsink R Flat, greased surface - 0.05 - thCS Weight -30 - g Mounting torque -1.3 - Nm www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94087 2 DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com Revision: 21-Jul-10