UH20FCT& UHB20FCT New Product Vishay General Semiconductor Dual Common-Cathode Ultrafast Recovery Rectifier FEATURES Oxide planar chip junction TO-220AB TO-263AB Ultrafast recovery times K Soft recovery characteristics Low switching losses, high efficiency High forward surge capability 2 Meets MSL level 1, per J-STD-020C, LF max peak 1 3 2 of 245 C (for TO-263AB package) 1 UH20FCT UHB20FCT Solder Dip 260 C, 40 seconds (for TO-220AB PIN 1 PIN 1 PIN 2 K package) CASE PIN 3 PIN 2 HEATSINK Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency power factor correctors, switching mode power supplies, free-wheeling diodes MAJOR RATINGS AND CHARACTERISTICS and secondary dc-to-dc rectification application. I 10 A x 2 F(AV) V 300 V RRM MECHANICAL DATA I 180 A FSM Case: TO-220AB & TO-263AB t 25 ns rr Epoxy meets UL 94V-0 flammability rating V 0.83 V F Terminals: Matte tin plated leads, solderable per T max 175 C j J-STD-002B and JESD22-B102D E3 suffix for commercial grade Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL UH20FCT UHB20FCT UNIT Maximum repetitive peak reverse voltage V 300 V RRM Maximum average forward rectified Per device 20 I A F(AV) current (see Fig.1) per diode 10 Peak forward surge current 8.3 ms single half per diode I 180 A FSM sine-wave superimposed on rated load Operating junction and storage temperature range T , T - 55 to + 175 C J STG ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT at I = 5.0 A, T = 25 C 0.96 - F j I = 5.0 A, T = 125 C 0.77 - F j Maximum instantaneous forward voltage V V (1) F per diode at I = 10 A, T = 25 C 1.0 1.2 F j I = 10 A, T = 125 C 0.83 0.90 F j T = 25 C 0.5 5 (1) j Maximum reverse current per diode at V = 300 V I A R R T = 125 C 25 150 j Document Number 88964 www.vishay.com 10-Nov-06 1UH20FCT& UHB20FCT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Maximum reverse recovery time at I = 0.5 A, I = 1.0 A, I = 0.25 A t 20 25 ns F R rr rr at I = 1.0 A, di/dt = 50 A/s, F Maximum reverse recovery time per diode t 28 35 ns rr V = 30 V, I = 0.1 I R rr RM Typical softness factor (tb/ta) S0.36 - - at I = 10 A, di/dt = 200 A/s, F Typical reverse recovery current V = 200 V, T = 125 C I 7.0 - A R J RM per diode Typical stored charge Q 160 - nC rr at I = 10 A, di/dt = 80 A/s, F Typical forward recovery time per diode t 150 - ns fr V = 1.1 x V FR Fmax Note: (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL UH20FCT UHB20FCT UNIT Typical thermal resistance per diode R 2.0 2.0 C/W JC ORDERING INFORMATION PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB UH20FCT-E3/4W 1.88 4W 50/Tube Tube TO-263AB UHB20FCT-E3/4W 1.38 4W 50/Tube Tube TO-263AB UHB20FCT-E3/8W 1.38 8W 800/Reel Tape & Reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 24 12 D = 0.8 11 D = 0.5 20 10 D = 0.3 9 D = 0.2 D = 1.0 16 8 D = 0.1 7 12 6 5 T 8 4 3 4 2 D - tp/T tp 1 0 0 125 02 4 6 8 10 12 0 25 50 75 100 150 175 Case Temperature (C) Average Forward Current (A) Figure 1. Maximum Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics Per Diode www.vishay.com Document Number 88964 2 10-Nov-06 Average Forward Rectified Current (A) Average Power Loss (W)