V20WL45-M3
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low V = 0.30 V at I = 5 A
F F
FEATURES
TMBS
Trench MOS Schottky technology
TO-252 (D-PAK)
Ideal for automated placement
Low forward voltage drop, low power losses
K
High efficiency operation
Meets MSL level 1, per J-STD-020,
NC LF maximum peak of 260 C
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
A
V20WL45
TYPICAL APPLICATIONS
NC
K
For use in high frequency DC/DC converters, switching
A HEATSINK power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: TO-252 (D-PAK)
I 20 A
F(AV)
Molding compound meets UL 94 V-0 flammability rating
V 45 V
RRM
Base P/N-M3 - halogen-free, RoHS-compliant, and
I 180 A
FSM
commercial grade
V at I = 20 A (T = 125 C) 0.48 V
F F A
Terminals: Matte tin plated leads, solderable per
T max. 150 C J-STD-002 and JESD 22-B102
J
M3 suffix meets JESD 201 class 1A whisker test
Package TO-252 (D-PAK)
Polarity: As marked
Diode variation Single die
MAXIMUM RATINGS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL V20WL45 UNIT
Maximum repetitive peak reverse voltage V 45 V
RRM
Maximum average forward rectified current (fig. 1) I 20 A
F(AV)
Peak forward surge current 8.3 ms single half sine-wave
I 180 A
FSM
superimposed on rated load
Operating junction and storage temperature range T , T -40 to +150 C
J STG
Revision: 04-Dec-13 Document Number: 89977
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000V20WL45-M3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
I = 5 A 0.41 -
F
I = 10 A T = 25 C 0.46 -
F A
I = 20 A 0.53 0.62
F
(1)
Instantaneous forward voltage V V
F
I = 5 A 0.30 -
F
I = 10 A T = 125 C 0.37 -
F A
I = 20 A 0.48 0.59
F
T = 25 C -4000 A
A
(2)
Reverse current V = 45 V I
R R
T = 125 C 24 53 mA
A
Notes
(1)
Pulse test: 300 s pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 5 ms
THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL V20WL45UNIT
R 1.6
JC
Typical thermal resistance C/W
(1)(2)
R 65
JA
Notes
(1)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R
D J JA
(2)
Free air, without heatsink
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
V20WL45-M3/I 0.38 I 2500/reel 13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted)
A
22 14
o
Rth =Rth =1.6 C/W
JA JC D = 0.8
D = 0.5
20
D = 0.3
12
18
D = 0.2
D = 0.1
16
10
14
D = 1.0
8
12
10
6
8
o
T
Rth =65 C/W
JA
6 4
4
2
D = t /T t
2 p p
0
0
0 25 50 75 100 125 150
0 4 8 1216 2024
Case Temperature (C)
Average Forward Current (A)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics
Revision: 04-Dec-13 Document Number: 89977
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Average Forward Rectified Current (A)
Average Power Loss (W)