333 3 V10P10 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount TMBS (Trench MOS Barrier Schottky) Rectifier Ultra Low V = 0.453 V at I = 5 A F F FEATURES eSMP Series Available Very low profile - typical height of 1.1 mm Ideal for automated placement K Trench MOS Schottky technology Low forward voltage drop, low power losses 1 High efficiency operation 2 Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C SMPC (TO-277A) AEC-Q101 qualified available - Automotive ordering code base P/NHM3 K Anode 1 Material categorization: for definitions of compliance Anode 2 Cathode please see www.vishay.com/doc 99912 LINKS TO ADDITIONAL RESOURCES TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection 3D Models applications. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: SMPC (TO-277A) I 10 A Molding compound meets UL 94 V-0 flammability rating F(AV) V 100 V Base P/N-M3 - halogen-free, RoHS-compliant, and RRM commercial grade I 180 A FSM Base P/NHM3 X - halogen-free, RoHS-compliant and E 100 mJ AS AEC-Q101 qualified V at I = 10 A 0.574 V F F ( X denotes revision code e.g. A, B,.....) T max. 150 C J Terminals: matte tin plated leads, solderable per Package SMPC (TO-277A) J-STD-002 and JESD 22-B102 Circuit configuration Single M3 and HM3 suffix meet JESD 201 class 2 whisker test MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V10P10 UNIT Device marking code V1010 Maximum repetitive peak reverse voltage V 100 V RRM Maximum average forward rectified current (fig. 1) I 10 A F(AV) Peak forward surge current 10 ms single half sine-wave I 180 A FSM superimposed on rated load Non-repetitive avalanche energy at I = 2.0 A, T = 25 C E 100 mJ AS J AS Peak repetitive reverse current at t = 2 s, 1 kHz, T = 38 C 2 C I 1.0 A p J RRM (1) Operating junction temperature range T -40 to +150 C J Storage temperature range T -55 to +150 C STG Note (1) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/R D J JA Revision: 07-Jan-2021 Document Number: 89006 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D V10P10 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage I = 1 mA T = 25 C V 100 (minimum) - V R A BR I = 5 A 0.512 - F T = 25 C A I = 10 A 0.625 0.68 F (1) Instantaneous forward voltage V V F I = 5 A 0.453 - F T = 125 C A I = 10 A 0.574 0.62 F T = 25 C 7.1 - A A V = 70 V R T = 125 C 4.5 - mA A (2) Reverse current I R T = 25 C 30.4 150 A A V = 100 V R T = 125 C 10.4 20 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise specified) A PARAMETER SYMBOL V10P10 UNIT R (1) 60 JA Typical thermal resistance C/W R 3 JL Note (1) Units mounted on recommended PCB 1 oz. pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE V10P10-M3/86A 0.10 86A 1500 7 diameter plastic tape and reel V10P10-M3/87A 0.10 87A 6500 13 diameter plastic tape and reel (1) V10P10HM3 A/H 0.10 H 1500 7 diameter plastic tape and reel (1) V10P10HM3 A/I 0.10 I 6500 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 07-Jan-2021 Document Number: 89006 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000
