V10WL45-M3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.33 V at I = 5 A F F FEATURES TMBS Trench MOS Schottky technology TO-252 (D-PAK) Ideal for automated placement Low forward voltage drop, low power losses K High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak NC of 260 C Material categorization: For definitions of compliance A please see www.vishay.com/doc 99912 V10WL45 TYPICAL APPLICATIONS NC K For use in high frequency DC/DC converters, switching HEATSINK A power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS MECHANICAL DATA I 10 A F(AV) Case: TO-252 (D-PAK) V 45 V RRM Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and I 100 A FSM commercial grade V at I = 10 A (T = 125 C) 0.41 V F F A Terminals: Matte tin plated leads, solderable per T max. 150 C J J-STD-002 and JESD 22-B102 Package TO-252 (D-PAK) M3 suffix meets JESD 201 class 1A whisker test Diode variation Single die Polarity: As marked MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V10WL45 UNIT Maximum repetitive peak reverse voltage V 45 V RRM Maximum average forward rectified current (fig. 1) I 10 A F(AV) Peak forward surge current 8.3 ms single half sine-wave I 100 A FSM superimposed on rated load Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 04-Dec-13 Document Number: 89970 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V10WL45-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.43 - F T = 25 C A I = 10 A 0.49 0.57 F (1) Instantaneous forward voltage V V F I = 5 A 0.33 - F T = 125 C A I = 10 A 0.41 0.52 F T = 25 C -1700 A A (2) Reverse current V = 45 V I R R T = 125 C 16 41 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V10WL45UNIT R 1.8 JC Typical thermal resistance C/W (1)(2) R 65 JA Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (2) Free air, without heatsink ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE V10WL45-M3/I 0.38 I 2500/reel 13 diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 12 6 D = 0.5 D = 0.8 Rth = Rth = 1.8 C/W JA JC D = 0.3 5 10 D = 0.2 4 8 D = 0.1 D = 1.0 Rth = 65 C/W 3 6 JA T 2 4 1 2 D = t /T p t p 0 0 0 1 23 45 67 8 9 10 11 12 0 25 50 75 100 125 150 Case Temperature ( Average Forward Current (A) C) Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 04-Dec-13 Document Number: 89970 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)