V12P10-M3/87A Vishay

333 3 V12P10 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount TMBS (Trench MOS Barrier Schottky) Rectifier Ultra Low V = 0.43 V at I = 5 A F F FEATURES eSMP Series Very low profile - typical height of 1.1 mm Ideal for automatic placement K Trench MOS Schottky technology Low forward voltage drop, low power losses 1 High efficiency operation 2 Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C SMPC (TO-277A) AEC-Q101 qualified available - Automotive ordering code base P/NHM3 K Anode 1 Material categorization: for definitions of compliance Anode 2 Cathode please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS ADDITIONAL RESOURCES For use in low voltage high frequency inverters, freewheeling, DC/DC converters and polarity protection 3D Models applications. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: SMPC (TO-277A) I 12 A F(AV) Molding compound meets UL 94 V-0 flammability rating V 100 V RRM Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade I 200 A FSM Base P/NHM3 X - halogen-free, RoHS-compliant and E 100 mJ AS AEC-Q101 qualified V at I = 12 A 0.58 V F F ( X denotes revision code e.g. A, B,.....) T max. 150 C J Terminals: matte tin plated leads, solderable per Package SMPC (TO-277A) J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix Circuit configuration Single meets JESD 201 class 2 whisker test MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V12P10 UNIT Device marking code V1210 Maximum repetitive peak reverse voltage V 100 V RRM Maximum average forward rectified current (fig. 1) I 12 A F(AV) Peak forward surge current 10 ms single half sine-wave I 200 A FSM superimposed on rated load Non-repetitive avalanche energy at I = 2.0 A, T = 25 C E 100 mJ AS J AS Peak repetitive reverse current at t = 2 s, 1 kHz, T = 38 C 2 C I 1.0 A p J RRM Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 18-Dec-2019 Document Number: 88981 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D V12P10 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage I = 1.0 mA T = 25 C V 100 (minimum) - R A BR I = 5 A 0.50 - F T = 25 C A I = 12 A 0.65 0.70 V F (1) Instantaneous forward voltage V F = 5 A I 0.43 - F T = 125 C A I = 12 A 0.58 0.64 F T = 25 C 7.0 - A A V = 70 V R T = 125 C 4.4 - mA A (2) Reverse current I R T = 25 C 21.3 250 A A V = 100 V R T = 125 C 11.8 20 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise specified) A PARAMETER SYMBOL V12P10 UNIT (1) R 60 JA Typical thermal resistance C/W R 3 JL Note (1) Units mounted on recommended PCB 1 oz. pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE V12P10-M3/86A 0.10 86A 1500 7 diameter plastic tape and reel V12P10-M3/87A 0.10 87A 6500 13 diameter plastic tape and reel (1) V12P10HM3 A/H 0.10 H 1500 7 diameter plastic tape and reel (1) V12P10HM3 A/I 0.10 I 6500 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 18-Dec-2019 Document Number: 88981 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000