V15WL45C-M3 www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.38 V at I = 3 A F F FEATURES Trench MOS Schottky technology TMBS TO-252 (D-PAK) Ideal for automated placement Low forward voltage drop, low power losses K High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak A of 260 C Material categorization: For definitions of compliance A please see www.vishay.com/doc 99912 V15WL45C TYPICAL APPLICATIONS A K For use in high frequency DC/DC converters, switching HEATSINK A power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: TO-252 (D-PAK) I 2 x 7.5 A F(AV) Molding compound meets UL 94 V-0 flammability rating V 45 V RRM Base P/N-M3 - halogen-free, RoHS-compliant, and I 90 A FSM commercial grade V at I = 7.5 A (T = 125 C) 0.40 V F F A T max. 150 C Terminals: Matte tin plated leads, solderable per J J-STD-002 and JESD 22-B102 Package TO-252 (D-PAK) M3 suffix meets JESD 201 class 1A whisker test Diode variation Dual common cathode Polarity: As marked MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V15WL45C UNIT Maximum repetitive peak reverse voltage V 45 V RRM per device 15 Maximum average forward rectified current I A F(AV) (fig. 1) per diode 7.5 Peak forward surge current 8.3 ms single half sine-wave I 90 A FSM superimposed on rated load per diode Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 04-Dec-13 Document Number: 89975 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V15WL45C-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 3 A 0.41 - F T = 25 C A I = 7.5 A 0.47 0.56 F (1) Instantaneous forward voltage per diode V V F I = 3 A 0.30 - F T = 125 C A I = 7.5 A 0.40 0.49 F T = 25 C -1300 A A (2) Reverse current per diode V = 45 V I R R T = 125 C 13 36 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V15WL45CUNIT per diode 2.6 R JC Typical thermal resistance per device 1.3 C/W (1)(2) per device R 65 JA Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (2) Free air, without heatsink ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE V15WL45C-M3/I 0.38 I 2500/reel 13 diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 17.5 4.5 D = 0.8 o Rth =Rth =1.3 C/W JA JC 4.0 D = 0.5 15 D = 0.3 3.5 D = 0.2 12.5 3.0 D = 0.1 D = 1.0 10 2.5 2.0 7.5 o 1.5 T Rth =65 C/W JA 5 1.0 2.5 0.5 D = t /T t p p 0.0 0 01 234 5678 9 0 25 50 75 100 125 150 Average Forward Current (A) Case Temperature (C) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 04-Dec-13 Document Number: 89975 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)