V2PM10 www.vishay.com Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES TMBS eSMP Series Available Very low profile - typical height of 0.65 mm Ideal for automated placement Trench MOS Schottky technology Low forward voltage drop Low power loss, high efficiency Top View Bottom View Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C MicroSMP (DO-219AD) AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 Cathode Anode Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 click logo to get started DESIGN SUPPORT TOOLS TYPICAL APPLICATIONS For use in low voltage high frequency inverters, Models Available freewheeling, DC/DC converters, and polarity protection applications, in commercial, industrial, and automotive applications. PRIMARY CHARACTERISTICS MECHANICAL DATA I 2 A F(AV) Case: MicroSMP (DO-219AD) V 100 V RRM Molding compound meets UL 94 V-0 flammability rating I 30 A FSM Base P/N-M3 - halogen-free, and RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and V at I = 2 A (125 C) 0.62 V F F AEC-Q101 qualified T max. 175 C J Terminals: matte tin plated leads, solderable per Package MicroSMP (DO-219AD) J-STD-002 and JESD 22-B102 Circuit configuration Single M3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V2PM10 UNIT Device marking code 2MB Maximum repetitive peak reverse voltage V 100 V RRM (1) I 1.5 A F(AV) Maximum DC forward current (2) I 2A F(AV) Peak forward surge current 10 ms single half sine-wave I 30 A FSM superimposed on rated load (3) Operating junction and storage temperature range T , T -40 to +175 C J STG Notes (1) Free air, mounted on recommended copper pad area (2) Mounted on 8.0 mm x 8.0 mm pad area (3) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/R D J JA Revision: 03-May-2018 Document Number: 87527 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V2PM10 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 1.0 A T = 25 C 0.61 - F A I = 2.0 A T = 25 C 0.75 0.83 F A (1) Instantaneous forward voltage V V F I = 1.0 A T = 125 C 0.53 - F A I = 2.0 A T = 125 C 0.62 0.7 F A T = 25 C 0.001 - A V = 70 V R T = 125 C 0.25 - A (2) Reverse current I mA R T = 25 C - 0.05 A V = 100 V R T = 125 C 0.5 2 A Typical junction capacitance 4.0 V, 1 MHz C 150 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V2PM10 UNIT (1)(2) R 130 JA Typical thermal resistance C/W (3) R 20 JM Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/ R D J JA (2) Free air, mounted on FR4 PCB, 2 oz. standard footprint, R - junction to ambient JA (3) Mounted on PCB with 8.0 mm x 8.0 mm copper pad areas, R - junction to mount JM ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V2PM10-M3/H 0.006 H 4500 7 diameter plastic tape and reel (1) V2PM10HM3/H 0.006 H 4500 7 diameter plastic tape and reel Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 2.4 0.8 D = 0.8 2.2 T = 148 C, R = 20 C/W M thJM 0.7 2.0 D = 0.5 1.8 0.6 D = 0.3 D = 1.0 T = 25 C, R = 130 C/W A thJA 1.6 0.5 1.4 D = 0.2 1.2 0.4 1.0 D = 0.1 0.3 0.8 T 0.6 0.2 0.4 0.1 T measured at cathode terminal mount M D = t /T p t 0.2 p typical values 0 0.0 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Average Forward Current (A) Mount Temperature (C) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Average Power Loss Characteristics Revision: 03-May-2018 Document Number: 87527 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)