V20PWM45C www.vishay.com Vishay General Semiconductor High Current Density Surface-Mount TMBS (Trench MOS Barrier Schottky) Rectifier Ultra Low V = 0.39 V at I = 5 A F F FEATURES eSMP Series Very low profile - typical height of 1.3 mm Trench MOS Schottky technology Ideal for automated placement K Low forward voltage drop, low power losses High efficiency operation 1 Meets MSL level 1, per J-STD-020, LF maximum peak 2 of 260 C AEC-Q101 qualified available SlimDPAK (TO-252AE) - Automotive ordering code: base P/NHM3 PIN 1 K Material categorization: for definitions of compliance PIN 2 HEATSINK please see www.vishay.com/doc 99912 click logo to get started TYPICAL APPLICATIONS DESIGN SUPPORT TOOLS For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications. Models Available MECHANICAL DATA Case: SlimDPAK (TO-252AE) PRIMARY CHARACTERISTICS Molding compound meets UL 94 V-0 flammability rating I 20 A F(AV) Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and V 45 V RRM AEC-Q101 qualified I 150 A FSM Terminals: matte tin plated leads, solderable per V at I = 10 A (T = 125 C) 0.46 V F F A J-STD-002 and JESD 22-B102 T max. 175 C J M3 and HM3 suffix meets JESD 201 class 2 whisker test Package SlimDPAK (TO-252AE) Circuit configuration Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V20PWM45C UNIT Device marking code V20PWM45C Maximum repetitive peak reverse voltage V 45 V RRM per device 20 A (1) Maximum average forward rectified current (fig. 1) I F(AV) per diode 10 A Peak forward surge current 8.3 ms single half sine-wave I 150 A FSM superimposed on rated load per diode (2) Operating junction temperature range T -40 to +175 C J Storage temperature range T -55 to +175 C STG Notes (1) With infinite heatsink (2) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/R D J JA Revision: 11-Feb-2019 Document Number: 87688 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000V20PWM45C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5.0 A 0.49 - F T = 25 C A I = 10 A 0.54 0.62 F (1) Instantaneous forward voltage per diode V V F I = 5.0 A 0.39 - F T = 125 C A I = 10 A 0.46 0.54 F T = 25 C -0.2 A (2) Reverse current per diode V = 45 V I mA R R T = 125 C 3 8 A Typical junction capacitance 4.0 V, 1 MHz C 1590 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V20PWM45C UNIT (1)(2) R 55 JA Typical thermal resistance C/W (3) R 1.8 JM Notes (1) The heat generated must be less than thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (2) Free air, mounted on recommended copper pad area thermal resistance R - junction to ambient JA (3) Mounted on infinite heat sink thermal resistance R - junction-to-mount JM ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V20PWM45C-M3/I 0.20 I 4500 13 diameter plastic tape and reel (1) V20PWM45CHM3/I 0.20 I 4500 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 11-Feb-2019 Document Number: 87688 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000