V30DL45BP-M3/I Vishay

33 3 V30DL45BP www.vishay.com Vishay General Semiconductor TMBS (Trench MOS Barrier Schottky) Rectifier for PV Solar Cell Bypass Protection Ultra Low V = 0.28 V at I = 5 A F F FEATURES eSMP Series Trench MOS Schottky technology SMPD (TO-263AC) Very low profile - typical height of 1.7 mm Ideal for automated placement K Low forward voltage drop, low power losses High efficiency operation 1 Meets MSL level 1, per J-STD-020, LF maximum peak 2 of 260 C Top View Bottom View Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 Anode 1 K TYPICAL APPLICATIONS Cathode Anode 2 For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. DESIGN SUPPORT TOOLS AVAILABLE MECHANICAL DATA 3D Models Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade PRIMARY CHARACTERISTICS Terminals: matte tin plated leads, solderable per I 30 A F(AV) J-STD-002 and JESD 22-B102 V 45 V RRM M3 suffix meets JESD 201 class 1A whisker test I 200 A FSM Polarity: as marked V at I = 30 A (T = 125 C) 0.51 V F F A T max. (AC model) 150 C OP T max. (DC forward current) 200 C J Package SMPD (TO-263AC) Circuit configuration Single MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V30DL45BP UNIT Maximum repetitive peak reverse voltage V 45 V RRM (1) 30 A Maximum DC forward current (fig. 1) I F(DC) Peak forward surge current 10 ms single half sine-wave superimposed on I 200 A FSM rated load Operating junction temperature range (AC model) T -40 to +150 C OP (2) Junction temperature in DC forward current without reverse bias, t = 1 h T 200 C J Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed.2 bypass diode thermal test Revision: 15-Mar-2019 Document Number: 87791 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DD D V30DL45BP www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.39 - F I = 15 A T = 25 C 0.47 - F A I = 30 A 0.57 0.65 F (1) Instantaneous forward voltage V V F I = 5 A 0.28 - F I = 15 A T = 125 C 0.38 - F A I = 30 A 0.51 0.60 F T = 25 C -3 A (2) Reverse current V = 45 V I mA R R T = 125 C 27 70 A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V30DL45BP UNIT R 1.1 JC Typical thermal resistance C/W (1)(2) R 45 JA Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (2) Free air, without heatsink ORDERING INFORMATION (Example) UNIT WEIGHT PACKAGE PREFERRED P/N PACKAGE CODE BASE QUANTITY DELIVERY MODE (g) SMPD (TO-263AC) V30DL45BP-M3/I 0.55 I 2000/reel 13 diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 35 22 D = 0.8 o 20 D = 0.5 Rth =Rth =1.1 C/W JA JC 30 18 D = 0.3 16 25 D = 0.2 D = 1.0 14 20 12 D = 0.1 10 15 8 T o Rth =45 C/W JA 6 10 4 5 D = t /T t p p 2 0 0 0 4 8 12 16 20 24 28 32 36 0 25 50 75 100 125 150 Average Forward Current (A) Case Temperature (C) Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 15-Mar-2019 Document Number: 87791 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DC Forward Current (A) Average Power Loss (W)