VESD05A8B-HNH-GS08 Vishay

VESD05A8B-HNH www.vishay.com Vishay Semiconductors 8-Line ESD Protection Diode Array in LLP1713-9L FEATURES 1 8 Ultra compact LLP1713-9L package 9 Low package profile < 0.6 mm 2 7 8-line ESD protection 3 6 Low leakage current I < 0.5 A R 4 5 Low load capacitance C = 20 pF D 20522 20521 ESD immunity acc. IEC 61000-4-2 17 kV contact discharge MARKING (example only) 17 kV air discharge Working voltage range V = 5 V RWM YXX e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn) 20719 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 Dot = pin 1 marking Y = type code (see table below) XX = date code click logo to get started DESIGN SUPPORT TOOLS Models Available ORDERING INFORMATION TAPED UNITS PER REEL DEVICE NAME ORDERING CODE MINIMUM ORDER QUANTITY (8 mm TAPE ON 7 REEL) VESD05A8B-HNH VESD05A8B-HNH-GS08 3000 15 000 PACKAGE DATA PACKAGE TYPE MOLDING COMPOUND MOISTURE DEVICE NAME WEIGHT SOLDERING CONDITIONS NAME CODE FLAMMABILITY RATING SENSITIVITY LEVEL MSL level 1 VESD05A8B-HNH LLP1713-9L E 3.7 mg UL 94 V-0 Peak temperature max. 260 C (according J-STD-020) ABSOLUTE MAXIMUM RATINGS VESD05A8B-HNH RATING TEST CONDITIONS SYMBOL VALUE UNIT BiAs-mode: each input (pin 1 to pin 8) to ground (pin 9) I 4A PPM acc. IEC 61000-4-5 t = 8/20 s single shot p Peak pulse current BiSy-mode: each input (pin 1 to pin 8) to any other input pin. I 3A PPM Pin 9 not connected. Acc. IEC 61000-4-5 t = 8/20 s single shot p BiAs-mode: each input (pin 1 to pin 8) to ground (pin 9) P 52 W PP acc. IEC 61000-4-5 t = 8/20 s single shot p Peak pulse power BiSy-mode: each input (pin 1 to pin 8) to any other input pin. P 45 W PP Pin 9 not connected. Acc. IEC 61000-4-5 tp = 8/20 s single shot Contact discharge acc. IEC 61000-4-2 10 pulses V 17 kV ESD BiAs-mode: eacht input (pin 1 to pin 8) to ground (pin 9) ESD immunity Air discharge acc. IEC 61000-4-2 10 pulses BiSy-mode: each input (pin 1 to pin 8) to any other input pin. V 10 kV ESD Pin 9 not connected Operating temperature Junction temperature T -40 to +125 C J Storage temperature T -55 to +150 C STG Rev. 1.6, 09-Jan-2019 Document Number: 81741 1 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VESD05A8B-HNH www.vishay.com Vishay Semiconductors BiAs-MODE (8-line bidirectional asymmetrical protection mode) With the VESD05A8B-HNH up to 8 signal- or data-lines (L1 to L8) can be protected against voltage transients. With pin 9 connected to ground and pin 1 up to pin 8 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified maximum reverse working voltage (V ) the RWM protection diode between data line and ground offer a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The clamping voltage (V ) is defined by the breakthrough voltage (V ) level plus the voltage drop at the series impedance C BR (resistance and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low forward voltage (V ) clamps the negative transient close to the ground level. F Due to the different clamping levels in forward and reverse direction the VESD05A8B-HNH clamping behaviour is bidirectional and asymmetrical (BiAs). L1 L8 1 8 9 L2 L7 2 7 L3 L6 3 6 L5 L4 4 5 20524 ELECTRICAL CHARACTERISTICS VESD05A8B-HNH (Between pin 1 to 8, and pin 9) (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N - - 8 lines channel Reverse stand-off voltage Max. reverse working voltage V -- 5 V RWM Reverse voltage at I = 0.5 A V 5- - V R R Reverse current at V = V = 5 V I -0.5A R RWM R Reverse breakdown voltage at I = 1 mA V 68V R BR Reverse clamping voltage at I = 4 A acc. IEC 61000-4-5 V -13V PP C Forward clamping voltage at I = 4 A acc. IEC 61000-4-5 V -4.5V F F at V = 0 V f = 1 MHz C -20 23 pF R D Capacitance at V = 2.5 V f = 1 MHz C -12 14 pF R D Rev. 1.6, 09-Jan-2019 Document Number: 81741 2 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000