VLDB1232.., VLDTG1232.. www.vishay.com Vishay Semiconductors Dome Lens SMD LED FEATURES VLD.1232R... VLD.1232G... Utilizing latest advanced InGaN technology Package type: surface-mount Package form: gullwing, reverse gullwing Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 High luminous flux and luminous intensity Luminous intensity and color categorized per packing unit Luminous intensity ratio per packing unit DESCRIPTION I /I 1.6 Vmax. Vmin. The dome lens SMD LED series has been designed in a ESD-withstand voltage: up to 2 kV according to small untinted and clear molded package with lens fo r JESD22-A114-B surface mounting as gullwing or reverse gullwing version. The VLD.1232... series is using recent ultrabright InGaN / Preconditioning according to JEDEC level 2a sapphire chip technology with high luminous flux. Suitable for reflow soldering according to J-STD-020 Material categorization: for definitions of compliance PRODUCT GROUP AND PACKAGE DATA please see www.vishay.com/doc 99912 Product group: LED APPLICATIONS Product series: power Package: SMD dome lens Traffic signals and signs Angle of half intensity: 9 Interior and exterior lighting Smoke detectors Bio sensing Indicator and backlighting purposes for audio, video, LCDs switches, symbols, illuminated advertising etc. SAFETY ADVICES Depending on the mode of operation, these devices emi t highly concentrated blue light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 62471 Photobiological Safety of Lamps and Lamp Systems. PARTS TABLE LUMINOUS FORWARD WAVELENGTH at at at INTENSITY VOLTAGE (nm) PART COLOR I I I TECHNOLOGY F F F (mcd) (V) (mA) (mA) (mA) MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX. VLDB1232G-08 Blue 1800 3500 - 20 458 465 472 20 2.6 3.0 3.4 20 InGaN on sapphire VLDB1232R-08 Blue 1800 3500 - 20 458 465 472 20 2.6 3.0 3.4 20 InGaN on sapphire VLDTG1232G-08 True green 7100 16 000 - 20 515 525 541 20 2.6 2.9 3.4 20 InGaN on sapphire VLDTG1232R-08 True green 7100 16 000 - 20 515 525 541 20 2.6 2.9 3.4 20 InGaN on sapphire Rev. 1.0, 12-Feb-2019 Document Number: 80003 1 For technical questions, contact: LED vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VLDB1232.., VLDTG1232.. www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb VLDB1232..., VLDTG1232... PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Reverse voltage Short term application only V 5V R DC Forward current T 60 C I 30 mA amb F Power dissipation P 100 mW V Junction temperature T 100 C j Operating temperature range T -40 to +100 C amb Storage temperature range T -40 to +100 C stg 2 Thermal resistance junction-to-ambient Mounted on PC board (pad size > 16 mm)R 400 K/W thJA Note (1) Driving the LED in reverse direction is suitable for a short term application only OPTICAL AND ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb VLDB1232G.., VLDB1232R.., BLUE PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT (1) Luminous intensity I = 20 mA I 1800 3500 - mcd F V Luminous flux/luminous intensity /I - 0.35 - mlm/mcd V V (1) Dominant wavelength I = 20 mA 458 465 472 nm F d Radiant intensity I = 20 mA I -62- mW/sr F e Peak wavelength I = 20 mA - 460 - nm F p Spectral bandwidth at 50 % I I = 20 mA -18- nm rel max. F Angle of half intensity I = 20 mA - 9 - F (1) Forward voltage I = 20 mA V 2.6 3.0 3.4 V F F Reverse current V = 5 V I -0.01 10 A R R Note (1) Tolerances: 15 % for I , 0.1 V for V , 1 nm for V F d OPTICAL AND ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb VLDTG1232G.., VLDTG1232R.., TRUE GREEN PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT (1) Luminous intensity I = 20 mA I 7100 16 000 - mcd F V Luminous flux/luminous intensity /I - 0.35 - mlm/mcd V V (1) Dominant wavelength I = 20 mA 515 525 541 nm F d Radiant intensity I = 20 mA I -37- mW/sr F e Peak wavelength I = 20 mA - 519 - nm F p Spectral bandwidth at 50 % I I = 20 mA -28- nm rel max. F Angle of half intensity I = 20 mA - 9 - F (1) Forward voltage I = 20 mA V 2.6 2.9 3.4 V F F Reverse current V = 5 V I -0.01 10 A R R Note (1) Tolerances: 15 % for I , 0.1 V for V , 1 nm for V F d Rev. 1.0, 12-Feb-2019 Document Number: 80003 2 For technical questions, contact: LED vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000