333 3 VOM617A www.vishay.com Vishay Semiconductors Low Input Current, Phototransistor Output, SOP-4, Mini-Flat Package FEATURES Operating temperature from -55 C to +110 C A 1 4 C SOP-4 mini-flat package C 2 3 E Isolation test voltage, 3750 V RMS Low saturation voltage Fast switching times i179089 Low coupling capacitance End-stackable, 0.100 (2.54 mm) spacing CTR range 50 % to 600 %, I = 5 mA F LINKS TO ADDITIONAL RESOURCES Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3D Models Design Tools Related Documents APPLICATIONS DESCRIPTION PLCs The 110 C rated VOM617A has a GaAs infrared emitting Telecommunication diode emitter, which is optically coupled to a silicon planar Lighting control system phototransistor detector, and is incorporated in a 4 pin Solar inverters 100 mil lead pitch miniflat package. It features a high current AC drives transfer ratio, low coupling capacitance, and high isolation voltage. AGENCY APPROVALS These coupling devices are designed for signal transmission (All parts are certified under base model VOM617A) between two electrically separated circuits. UL1577 cUL DIN EN 60747-5-5 (VDE 0884-5), available with option 1 CQC FIMKO ORDERING INFORMATION V O M 6 1 7 A - X 001 T SOP-4 PART NUMBER CTR VDE OPTION TAPE BIN AND 5 REEL AGENCY CTR (%) CERTIFIED/ PACKAGE 5 mA UL, cUL, 50 to 600 63 to 125 100 to 200 160 to 320 250 to 500 80 to 160 130 to 260 200 to 400 FIMKO, CQC SOP-4, VOM617AT VOM617A-2T VOM617A-3T VOM617A-4T VOM617A-6T VOM617A-7T VOM617A-8T VOM617A-9T mini-flat VDE, UL, cUL, FIMKO, CQC 50 to 600 63 to 125 100 to 200 160 to 320 250 to 500 80 to 160 130 to 260 200 to 400 (option 1) VOM617A- 8X001T, SOP-4, VOM617A- VOM617A- VOM617A- VOM617A- VOM617A- VOM617A- VOM617A- mini-flat X001T 2X001T 3X001T 4X001T 6X001T 7X001T 9X001T VOM617A- (1) 8X001T2 Notes Available only on tape and reel (1) Product is rotated 180 in tape and reel cavity Rev. 1.4, 24-Sep-2020 Document Number: 83446 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VOM617A www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT DC forward current I 60 mA F Reverse voltage V 6V R Power dissipation P 70 mW diss Surge forward current t 10 s I 2.5 A p FSM OUTPUT Collector emitter voltage V 80 V CEO Emitter collector voltage V 7V ECO 50 mA Collector current I C t 1 ms 100 mA p Power dissipation P 150 mW diss COUPLER Total power dissipation P 170 mW tot Operating temperature range T -55 to +110 C amb Storage temperature range T -55 to +150 C stg Junction temperature T 125 C j (1) Soldering temperature T 260 C sld Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability (2) See Assembly Instructions for surface mounted devices (www.vishay.com/doc 80054) 200 Coupled device 150 Phototransistor 100 IR-diode 50 0 0 25 50 75 100 125 T - Ambient Temperature (C) amb Fig. 1 - Total Power Dissipation vs. Ambient Temperature Rev. 1.4, 24-Sep-2020 Document Number: 83446 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Total Power Dissipation (mW) tot