VOS615B www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, SSOP-4, Half Pitch, Mini-Flat Package FEATURES High CTR with low input current A 1 4 C SSOP low profile package (half pitch) High collector emitter voltage, V = 80 V CEO C 2 3 E Isolation test voltage = 3750 V RMS Low coupling capacitance High common mode transient immunity 22628-1 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION The VOS615B series has a GaAs infrared emitting diode APPLICATIONS emitter, which is optically coupled to a silicon planar Telecom phototransistor detector, and is incorporated in a 4-pin Industrial controls 50 mil lead pitch mini-flat package. Battery powered equipment It features a high current transfer ratio at low input current, low coupling capacitance, and high isolation voltage. Office machines The coupling devices are designed for signal transmission Programmable controllers between two electrically separated circuits. AGENCY APPROVALS Safety application model number covering all products in this datasheet is VOS615B. This model number should be used when consulting safety agency documents. UL1577, file no. E76222, double protection cUL, accordance to CSA component acceptance service no. 5A, double protection DIN EN 60747-5-5 (VDE 0884-5), available with option 1 FIMKO EN 60950-1 CQC GB4943.1-2011 and GB8898-2011 (suitable for installation altitude below 2000 m) ORDERING INFORMATION V O S 6 1 5 B - X 001 T SSOP-4 PART NUMBER CTR PACKAGE OPTION TAPE 5 mm BIN AND REEL CTR (%) AGENCY CERTIFIED/PACKAGE 10 mA UL, cUL, FIMKO, CQC 50 to 600 63 to 125 100 to 200 160 to 320 SSOP-4, 50 mil pitch VOS615BT - VOS615B-3T - UL, CUL, FIMKO, CQC, VDE (option 1) 50 to 600 63 to 125 100 to 200 160 to 320 SSOP-4, 50 mil pitch VOS615B-X001T VOS615B-2X001T VOS615B-3X001T VOS615B-4X001T Note Additional options may be possible, please contact sales office. Rev. 1.0, 06-Nov-15 Document Number: 84311 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VOS615B www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 6V R Power dissipation P 100 mW diss Forward current I 60 mA F Surge forward current t 10 s I 1.5 A p FSM Junction temperature T 125 C j OUTPUT Collector emitter voltage V 80 V CEO Emitter collector voltage V 7V ECO Collector current I 50 mA C Power dissipation P 150 mW diss Junction temperature T 125 C j COUPLER Isolation test voltage t = 1 min V 3750 V ISO RMS between emitter and detector Total power dissipation P 250 mW tot Storage temperature range T -55 to +150 C stg Ambient temperature range T -55 to +110 C amb (1) Soldering temperature t = 10 s T 260 C sld Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices. 300 70 Coupled device 60 250 50 200 Phototransistor 40 150 30 IR diode 100 20 50 10 0 0 0 20 40 60 80 100 120 -25 0 25 50 75 100 125 T - Ambient Temperature (C) T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation vs. Ambient Temperature Fig. 2 - Maximum Forward Current vs. Ambient Temperature Rev. 1.0, 06-Nov-15 Document Number: 84311 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Total Power Dissipation (mW) tot I - Maximum Forward Current (mA) F