VOS617A www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, SSOP-4, Half Pitch, Mini-Flat Package FEATURES High CTR with low input current A 1 4 C Low profile package (half pitch) High collector emitter voltage, V = 80 V CEO C 2 3 E Isolation test voltage = 3750 V RMS Low coupling capacitance High common mode transient immunity 22628-1 Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION The VOS617A series has a GaAs infrared emitting diode APPLICATIONS emitter, which is optically coupled to a silicon planar Telecom phototransistor detector, and is incorporated in a 4-pin Industrial controls 50 mil lead pitch mini-flat package. Battery powered equipment It features a high current transfer ratio at low input current, low coupling capacitance, and high isolation voltage. Office machines The coupling devices are designed for signal transmission Programmable controllers between two electrically separated circuits. AGENCY APPROVALS Safety application model number covering all products in this datasheet is VOS617A. This model number should be used when consulting safety agency documents. UL1577, file no. E52744 cUL DIN EN 60747-5-5 (VDE 0884-5), available with option 1 FIMKO EN 60065, EN 60950-1 CQC GB4943.1-2011 and GB8898-2011 (suitable for installation altitude below 2000 m) ORDERING INFORMATION V O S 6 1 7 A - X 001 T SSOP-4 PART NUMBER CTR PACKAGE OPTION TAPE 5 mm BIN AND REEL CTR (%) AGENCY CERTIFIED/ PACKAGE 5 mA UL, cUL, FIMKO, CQC 50 to 600 63 to 125 100 to 200 160 to 320 80 to 160 130 to 260 200 to 400 SSOP-4, VOS617AT VOS617A-2T VOS617A-3T VOS617A-4T VOS617A-7T VOS617A-8T VOS617A-9T 50 mil pitch UL, CUL, FIMKO, 50 to 600 63 to 125 100 to 200 160 to 320 80 to 160 130 to 260 200 to 400 CQC, VDE (option 1) SSOP-4, VOS617A- VOS617A- VOS617A- VOS617A- VOS617A- VOS617A- VOS617A- 50 mil pitch X001T 2X001T 3X001T 4X001T 7X001T 8X001T 9X001T Note Additional options may be possible, please contact sales office. Rev. 1.4, 08-Jan-14 Document Number: 83497 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VOS617A www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 6V R Power dissipation P 70 mW diss Surge forward current t 10 s I 1.5 A p FSM Forward current I 50 mA F OUTPUT Collector emitter voltage V 80 V CEO Emitter collector voltage V 7V ECO Collector current I 50 mA C Power dissipation P 150 mW diss COUPLER Isolation test voltage t = 1 min V 3750 V ISO RMS between emitter and detector Total power dissipation P 170 mW tot Storage temperature range T -55 to +150 C stg Ambient temperature range T -55 to +110 C amb Junction temperature T 125 C j (1) Soldering temperature t = 10 s T 260 C sld Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices. 160 60 140 50 120 40 100 80 30 60 20 40 10 20 0 0 - 25 0 25 50 75 100 125 - 25 0 25 50 75 100 125 T - Ambient Temperature (C) T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation vs. Ambient Temperature Fig. 2 - Forward Current vs. Ambient Temperature Rev. 1.4, 08-Jan-14 Document Number: 83497 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Collector Power Dissipation (mW) diss I - Forward Current (mA) F