VS-12CWQ06FN-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 6 A FEATURES Base common Low forward voltage drop cathode 4 Guard ring for enhanced ruggedness and long term reliability Popular D-PAK outline Center tap configuration 2 Small foot print, surface mountable Common cathode High frequency operation D-PAK (TO-252AA) 13 Anode Anode Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Material categorization: for definitions of compliance PRODUCT SUMMARY please see www.vishay.com/doc 99912 Package D-PAK (TO-252AA) I 2 x 6 A F(AV) DESCRIPTION V 60 V R The VS-12CWQ06FN-M3 surface mount, center tap, Schottky rectifier series has been designed for applications V at I 0.57 V F F requiring low forward drop and small foot prints on PC I 35 mA at 125 C RM board. Typical applications are in disk drives, switching T max. 150 C J power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. Diode variation Common cathode E 7 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 12 A F(AV) V 60 V RRM I t = 5 s sine 320 A FSM p V 6 A , T = 125 C (per leg) 0.57 V F pk J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-12CWQ06FN-M3 UNITS Maximum DC reverse voltage V R 60 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average per leg 6 forward current I 50 % duty cycle at T = 131 C, rectangular waveform A F(AV) C per device 12 See fig. 5 Maximum peak one cycle Following any rated 5 s sine or 3 s rect. pulse 320 non-repetitive surge current I load condition and with A FSM 10 ms sine or 6 ms rect. pulse 105 See fig. 7 rated V applied RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 1.2 A, L = 10 mH 7 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 0.8 A AR maximum V = 1.5 x V typical Frequency limited by T J A R Revision: 22-Nov-16 Document Number: 93289 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-12CWQ06FN-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 6 A 0.61 T = 25 C J Maximum forward 12 A 0.79 (1) voltage drop per leg V V FM 6 A 0.57 See fig. 1 T = 125 C J 12 A 0.72 Maximum reverse T = 25 C 3 J (1) leakage current per leg I V = Rated V mA RM R R T = 125 C 35 See fig. 2 J Threshold voltage V 0.36 V F(TO) T = T maximum J J Forward slope resistance r 24.14 m t Typical junction capacitance per leg C V = 5 V , (test signal range 100 kHz to 1 MHz), 25 C 360 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 5.0 nH S Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage (1) T , T -55 to +150 C J Stg temperature range per leg 3.0 Maximum thermal resistance, DC operation R C/W thJC junction to case See fig. 4 per device 1.5 0.3 g Approximate weight 0.01 oz. Marking device Case style D-PAK (similar to TO-252AA) 12CWQ06FN Note dP 1 tot (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA Revision: 22-Nov-16 Document Number: 93289 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000