VS-15TQ060PbF, VS-15TQ060-N3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 15 A FEATURES 150 C T operation J Base cathode Very low forward voltage drop 2 High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 1 3 TO-220AC Guard ring for enhanced ruggedness and long Cathode Anode Available term reliability Designed and qualified according to JEDEC -JESD47 PRODUCT SUMMARY Material categorization: for definitions of compliance Package TO-220AC please see www.vishay.com/doc 99912 I 15 A F(AV) DESCRIPTION V 60 V R The VS-15TQ060... Schottky rectifier has been optimized for V at I 0.56 V F F very low forward voltage drop, with moderate leakage. The I max. 45 mA at 125 C RM proprietary barrier technology allows for reliable operation T max. 150 C up to 150 C junction temperature. Typical applications are J in switching power supplies, converters, freewheeling Diode variation Single die diodes, and reverse battery protection. E 6 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 15 A F(AV) V 60 V RRM I t = 5 s sine 1000 A FSM p V 15 A , T = 125 C 0.56 V F pk J T Range -55 to 150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-15TQ060PbF VS-15TQ060-N3 UNITS Maximum DC reverse voltage V R 60 60 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I 50 % duty cycle at T = 104 C, rectangular waveform 15 F(AV) C See fig. 5 Following any rated 5 s sine or 3 s rect. pulse 1000 A Maximum peak one cycle load condition and non-repetitive surge current I FSM with rated V RRM See fig. 7 10 ms sine or 6 ms rect. pulse 260 applied Non-repetitive avalanche energy E T = 25 C, I = 1.50 A, L = 11.5 mH 6 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1.50 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 22-Apr-14 Document Number: 94142 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-15TQ060PbF, VS-15TQ060-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 15 A 0.62 T = 25 C J 30 A 0.82 Maximum forward voltage drop (1) V V FM See fig. 1 15 A 0.56 T = 125 C J 30 A 0.71 T = 25 C 0.80 J Maximum reverse leakage curent I (1) V = Rated V mA RM R R See fig. 2 T = 125 C 45 J Maximum junction capacitance C V = 5 V , (test signal range 100 kHz to 1 MHz) 25 C 720 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 8 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -55 to 150 C J Stg temperature range Maximum thermal resistance, DC operation R 3.25 thJC junction to case See fig. 4 C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) Marking device Case style TO-220AC (JEDEC) 15TQ060 Revision: 22-Apr-14 Document Number: 94142 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000