VS-15TQ060SPbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 15 A FEATURES Base 150 C T operation J cathode 2 Very low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 1 3 Guard ring for enhanced ruggedness and long N/C Anode 2 D PAK term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C PRODUCT SUMMARY AEC-Q101 qualified 2 Package D PAK Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 I 15 A F(AV) V 60 V R DESCRIPTION V at I 0.56 V F F The VS-15TQ060SPbF Schottky rectifier has been I max. 45 mA at 125 C RM optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for T max. 150 C J reliable operation up to 150 C junction temperature. Typical Diode variation Single die applications are in switching power supplies, converters, E 6 mJ freewheeling diodes, and reverse battery protection. AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 15 A F(AV) V 60 V RRM I t = 5 s sine 1000 A FSM p V 15 A , T = 125 C 0.56 V F pk J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-15TQ060SPbF UNITS Maximum DC reverse voltage V R 60 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 104 C, rectangular waveform 15 A F(AV) C See fig. 5 Maximum peak one cycle 5 s sine or 3 s rect. pulse Following any rated 1000 non-repetitive surge current I load condition and with A FSM See fig. 7 rated V applied 10 ms sine or 6 ms rect. pulse 260 RRM Non-repetitive avalanche energy E T = 25 C, I = 1.5 A, L = 11.5 mH 6 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1.50 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 22-Apr-14 Document Number: 94143 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-15TQ060SPbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 15 A 0.62 T = 25 C J 30 A 0.82 Maximum forward voltage drop (1) V V FM See fig. 1 15 A 0.56 T = 125 C J 30 A 0.71 T = 25 C 0.80 J Maximum reverse leakage current (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 45 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 720 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -55 to +150 C J Stg temperature range Maximum thermal resistance, DC operation R 3.25 thJC junction to case See fig. 4 C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 2 PAK 15TQ060S Marking device Case style D Revision: 22-Apr-14 Document Number: 94143 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000