333 3 VS-16CDH02-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 8 A FRED Pt FEATURES eSMP Series Hyperfast recovery time, reduced Q , and soft rr SMPD (TO-263AC) recovery 175 C maximum operating junction temperature K Specified for output and snubber operation Low forward voltage drop 1 Low leakage current 2 Meets MSL level 1, per J-STD-020, LF maximum peak Top View Bottom View of 260 C Anode 1 K Meets JESD 201 class 2 whisker test Material categorization: for definitions of compliance Anode 2 Cathode please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS LINKS TO ADDITIONAL RESOURCES State of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage 3D Models drop and hyperfast recovery time. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics. PRIMARY CHARACTERISTICS These devices are intended for use in the output rectificatio n I 2 x 8 A F(AV) stage of SMPS, telecom, DC/DC converters as well as V 200 V R freewheeling diode in low voltage inverters and choppe r V at I 0.77 V F F motor drives. t 27 ns rr Their extremely optimized stored charge and low recovery T max. 175 C current minimize the switching losses and reduce power J dissipation in the switching element. Package SMPD (TO-263AC) Circuit configuration Common cathode MECHANICAL DATA Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 200 V RRM per device 16 Average rectified forward current I T = 155 C F(AV) solder pad per diode 8 A per device 190 Non-repetitive peak surge current I T = 25 C, 6 ms square pulse FSM J per diode 100 ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 200 - - BR R R I = 8 A - 0.93 1.03 V F Forward voltage, per diode V F I = 8 A, T = 150 C - 0.77 0.87 F J V = V rated - - 2 R R Reverse leakage current, per diode I A R T = 150 C, V = V rated - 6 100 J R R Junction capacitance, per diode C V = 200 V - 23 - pF T R Revision: 21-Jan-2021 Document Number: 95812 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-16CDH02-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V - 27 - F F R I = 0.5 A, I = 1 A, I = 0.25 A - - 25 F R rr Reverse recovery time t ns rr T = 25 C -23- J T = 125 C - 35 - J I = 8 A, F T = 25 C - 2.8 - J Peak recovery current I dI /dt = 200 A/s, A RRM F T = 125 C - 5 - J V = 160 V R T = 25 C - 30 - J Reverse recovery charge Q nC rr T = 125 C - 90 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -55 - +175 C J Stg temperature range Thermal resistance, per diode R -1.8 2.5 C/W thJM junction to mount 0.55 g Approximate weight 0.02 oz. Marking device Case style SMPD (TO-263AC) 16CDH02 100 100 T = 175 C J 10 T = 150 C J T = 175 C J 1 10 T = 150C J T = 125 C J 0.1 T = 125C J 1 0.01 T = 25C J T = 25 C J 0.001 T = -40 C J 0.0001 0.1 050 100 150 200 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 V - Reverse Voltage (V) V -Forward Voltage Drop (V) R F Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 21-Jan-2021 Document Number: 95812 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R