VS-80APF0..PbF Series, VS-80APF0..-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 80 A FEATURES Base 150 C max. operating junction temperature cathode + Low forward voltage drop and short reverse 2 recovery time Designed and qualified according to JEDEC -JESD47 3 2 Material categorization: 1 13 For definitions of compliance please see Available Anode -- Anode TO-247AC www.vishay.com/doc 99912 APPLICATIONS PRODUCT SUMMARY These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as Package TO-247AC well as in input rectification where severe restrictions on I 80 A F(AV) conducted EMI should be met. V 200 V, 400 V, 600 V R V at I 1.25 V F F DESCRIPTION I 1000 A FSM The VS-80APF0... soft recovery rectifier series has been t 70 ns rr optimized for combined short reverse recovery time and low T max. 150 C J forward voltage drop. Diode variation Single die The glass passivation ensures stable reliable operation in Snap factor 0.5 the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS V 200 to 600 V RRM I Sinusoidal waveform 80 F(AV) A I 1000 FSM t 1 A, - 100 A/s 70 ns rr V 40 A, T = 25 C 1.1 V F J T Range -40 to 150 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-80APF02PbF, VS-80APF02-M3 200 300 VS-80APF04PbF, VS-80APF04-M3 400 500 17 VS-80APF06PbF, VS-80APF06-M3 600 700 Revision: 19-Dec-13 Document Number: 93722 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-80APF0..PbF Series, VS-80APF0..-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I T = 95 C, 180 conduction half sine wave 80 F(AV) C 10 ms sine pulse, rated V applied 850 A RRM Maximum peak one cycle I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 1000 10 ms sine pulse, rated V applied 3610 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 5100 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 51 000 A s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum forward voltage drop V 80 A, T = 25 C 1.25 V FM J Forward slope resistance r 3.5 m t T = 150 C J Threshold voltage V 0.85 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 17 J RECOVERY CHARACTERISTICS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS I Reverse recovery time t 190 ns FM rr I at 40 Apk F t rr Reverse recovery current I 25 A/s 3.4 A rr t 25 C di Reverse recovery charge Q 0.5 C rr dt Q rr Snap factor S 0.5 I RM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage T , T -40 to 150 C J Stg temperature range Maximum thermal resistance, R DC operation 0.35 thJC junction to case Maximum thermal resistance, R 40 C/W thJA junction to ambient Typical thermal resistance, R Mounting surface, smooth and greased 0.2 thCS case to heatsink 6g Approximate weight 0.21 oz. minimum 6 (5) kgf cm Mounting torque (Ibf in) maximum 12 (10) 80APF02 Marking device Case style TO-247AC 80APF04 80APF06 Revision: 19-Dec-13 Document Number: 93722 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000