VS-80APF0..PbF Series, VS-80APF0..-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 80 A FEATURES Base Glass passivated pellet chip junction cathode + 150 C max. operating junction temperature 2 Low forward voltage drop and short reverse recovery time Designed and qualified according to JEDEC -JESD 47 13 Available Material categorization: Anode -- Anode TO-247AC for definitions of compliance please see www.vishay.com/doc 99912 PRODUCT SUMMARY APPLICATIONS Package TO-247AC These devices are intended for use in output rectification I 80 A F(AV) and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on V 200 V, 400 V, 600 V R conducted EMI should be met. V at I 1.25 V F F I 1000 A FSM DESCRIPTION t 70 ns rr The VS-80APF0... soft recovery rectifier series has been T max. 150 C J optimized for combined short reverse recovery time and low Diode variation Single die forward voltage drop. Snap factor 0.5 The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS V 200 to 600 V RRM I Sinusoidal waveform 80 F(AV) A I 1000 FSM t 1 A, - 100 A/s 70 ns rr V 40 A, T = 25 C 1.1 V F J T Range -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-80APF02PbF, VS-80APF02-M3 200 300 VS-80APF04PbF, VS-80APF04-M3 400 500 17 VS-80APF06PbF, VS-80APF06-M3 600 700 Revision: 11-Feb-16 Document Number: 93722 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-80APF0..PbF Series, VS-80APF0..-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I T = 95 C, 180 conduction half sine wave 80 F(AV) C 10 ms sine pulse, rated V applied 850 A RRM Maximum peak one cycle I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 1000 10 ms sine pulse, rated V applied 3610 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 5100 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 51 000 A s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum forward voltage drop V 80 A, T = 25 C 1.25 V FM J Forward slope resistance r 3.5 m t T = 150 C J Threshold voltage V 0.85 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 17 J RECOVERY CHARACTERISTICS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS I Reverse recovery time t 190 ns FM rr I at 40 A t F pk rr Reverse recovery current I 25 A/s 3.4 A rr t 25 C di Reverse recovery charge Q 0.5 C rr dt Q rr Snap factor S 0.5 I RM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 0.35 thJC junction to case Maximum thermal resistance, R 40 C/W thJA junction to ambient Typical thermal resistance, R Mounting surface, smooth, and greased 0.2 thCS case to heatsink 6g Approximate weight 0.21 oz. minimum 6 (5) kgf cm Mounting torque (Ibf in) maximum 12 (10) 80APF02 Marking device Case style TO-247AC 80APF04 80APF06 Revision: 11-Feb-16 Document Number: 93722 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000