333 3 VS-16EDU06-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 16 A FRED Pt FEATURES eSMP Series Ultrafast recovery time, reduced Q , and soft rr SMPD (TO-263AC) recovery 175 C maximum operating junction temperature K For PFC CRM, snubber operation Low forward voltage drop Low leakage current 1 Meets MSL level 1, per J-STD-020, LF maximum peak 2 Top View Bottom View of 260 C Meets JESD 201 class 2 whisker test Material categorization: for definitions of compliance Anode 1 K please see www.vishay.com/doc 99912 Anode 2 Cathode DESCRIPTION / APPLICATIONS State of the art ultrafast recovery rectifiers designed with LINKS TO ADDITIONAL RESOURCES optimized performance of forward voltage drop and ultrafast recovery time, and soft recovery. 3D Models The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics. PRIMARY CHARACTERISTICS These devices are intended for use in PFC, boost, lighting, I 16 A F(AV) in the AC/DC section of SMPS, freewheeling and clamp V 600 V R diodes. V at I 0.91 V F F Their extremely optimized stored charge and low recovery t 55 ns rr current minimize the switching losses and reduce power T max. 175 C J dissipation in the switching element and snubbers. Package SMPD (TO-263AC) MECHANICAL DATA Circuit configuration Single Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 600 V RRM Average rectified forward current I T = 141 C 16 F(AV) solder pad A Non-repetitive peak surge current I T = 25 C, 6 ms square pulse 160 FSM J ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 600 - - BR R R I = 16 A - 1.04 1.25 V F Forward voltage V F I = 16 A, T = 150 C - 0.91 1.1 F J V = V rated - - 15 R R Reverse leakage current I A R T = 150 C, V = V rated - 70 300 J R R Junction capacitance C V = 600 V - 16 - pF T R Revision: 29-Jan-2021 Document Number: 95818 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-16EDU06-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V - 55 - F F R I = 0.5 A, I = 1 A, I = 0.25 A - - 55 F R rr Reverse recovery time t ns rr T = 25 C - 100 - J T = 125 C - 150 - J I = 16 A, F T = 25 C - 20 - J Peak recovery current I dI /dt = 500 A/s, A RRM F T = 125 C - 27 - J V = 400 V R T = 25 C - 1 - J Reverse recovery charge Q C rr T = 125 C - 2 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -55 - +175 C J Stg temperature range Thermal resistance, R -1.2 1.7 C/W thJM junction to mount 0.55 g Approximate weight 0.02 oz. Marking device Case style SMPD (TO-263AC) 16EDU06 1000 100 T = 175 C J 100 T = 175 C J T = 150 C J 10 10 T = 150 C J T = 125 C J 1 T = 125 C J 0.1 1 T = 25 C T = 25 C J J 0.01 T = -40 C J 0.001 0.1 0 100 200 300 400 500 600 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R F Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 29-Jan-2021 Document Number: 95818 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R