VS-20ETS16THM3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 20 A FEATURES Base cathode Glass passivated pellet chip junction 2 2 AEC-Q101 qualified Meets JESD 201 class 1A whisker test Flexible solution for reliable AC power 1 rectification 1 3 3 High surge, low V rugged blocking diode for DC charging Anode F Cathode 2L TO-220AC stations Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS APPLICATIONS I 20 A F(AV) On-board and off-board EV/HEV battery chargers V 1600 V R Input rectification V at I 1.1 V F F I 300 A FSM DESCRIPTION T max. 150 C J High voltage rectifiers optimized for very low forward Package 2L TO-220AC voltage drop with moderate leakage. Circuit configuration Single These devices are intended for use in main rectification (single or three phase bridge). OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS Capacitive input filter T = 55 C, T = 125 C A J 16.3 21 A common heatsink of 1 C/W MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 20 A F(AV) V 1600 V RRM I 300 A FSM V 10 A, T = 25 C 1.0 V F J T -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-20ETS16THM3 1600 1700 1 Revision: 27-Mar-2019 Document Number: 96536 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-20ETS16THM3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I T = 105 C, 180 conduction half sine wave 20 F(AV) C 10 ms sine pulse, rated V applied 250 A Maximum peak one cycle RRM I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 300 10 ms sine pulse, rated V applied 316 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 442 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 4420 A s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum forward voltage drop V 20 A, T = 25 C 1.1 V FM J Forward slope resistance r 10.4 m t T = 150 C J Threshold voltage V 0.85 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 1.0 J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 1.3 thJC junction to case C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.5 thCS case to heatsink 2 g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) Marking device Case style 2L TO-220AC 20ETS16TH R (DC) = 1.3 C/W thJC R (DC) = 1.3 C/W thJC Conduction angle Conduction period 30 60 90 60 120 90 120 30 180 DC 180 0 2 4 6 8 10 12 14 16 18 20 22 05110520 25 30 35 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Revision: 27-Mar-2019 Document Number: 96536 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 150 150 140 140 130 130 120 120 110 110 100 100 90 90 Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C)