VS-30BQ100HM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 3 A FEATURES Low forward voltage drop Guard ring for enhanced ruggedness and long Cathode Anode term reliability Small foot print, surface mountable High frequency operation DO-214AB (SMC) Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Meets JESD 201 class 2 whisker test PRODUCT SUMMARY AEC-Q101 qualified Package DO-214AB (SMC) Material categorization: for definitions of compliance I 3.0 A please see www.vishay.com/doc 99912 F(AV) V 100 V R DESCRIPTION V at I 0.62 V F F The VS-30BQ100HM3 surface mount Schottky rectifier has I 5 mA at 125 C RM been designed for applications requiring low forward drop T max. 175 C and small foot prints on PC boards. Typical applications are J in disk drives, switching power supplies, converters, Diode variation Single die freewheeling diodes, battery charging, and reverse battery E 3.0 mJ AS protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 3.0 A F(AV) V 100 V RRM I t = 5 s sine 800 A FSM p V 3.0 A , T = 125 C 0.62 V F pk J T Range -55 to +175 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-30BQ100HM3 UNITS Maximum DC reverse voltage V R 100 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 50 % duty cycle at T = 148 C, rectangular waveform 3.0 L Maximum average forward current I F(AV) 50 % duty cycle at T = 138 C, rectangular waveform 4.0 L A Following any rated 5 s sine or 3 s rect. pulse 800 Maximum peak one cycle I load condition and with FSM non-repetitive surge current 10 ms sine or 6 ms rect. pulse 70 rated V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 1.0 A, L = 6 mH 3.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 0.5 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 17-Dec-14 Document Number: 94832 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-30BQ100HM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 3 A 0.79 T = 25 C J 6 A 0.90 (1) Maximum forward voltage drop V V FM 3 A 0.62 T = 125 C J 6 A 0.70 T = 25 C 0.5 J Maximum reverse leakage current I V = Rated V mA RM R R T = 125 C 5.0 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 115 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 3.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width = 300 s, duty cycle = 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and (1) T , T -55 to +175 C J Stg storage temperature range Maximum thermal resistance, (2) R 12 thJL junction to lead DC operation C/W Maximum thermal resistance, R 46 thJA junction to ambient 0.24 g Approximate weight 0.008 oz. Marking device Case style SMC (similar to DO-214AB) 3J Notes dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA (2) Mounted 1 square PCB Revision: 17-Dec-14 Document Number: 94832 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000