X-On Electronics has gained recognition as a prominent supplier of VS-30TPS12L-M3 SCRs across the USA, India, Europe, Australia, and various other global locations. VS-30TPS12L-M3 SCRs are a product manufactured by Vishay. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

VS-30TPS12L-M3 Vishay

VS-30TPS12L-M3 electronic component of Vishay
Images are for reference only
See Product Specifications
Part No.VS-30TPS12L-M3
Manufacturer: Vishay
Category: SCRs
Description: SCRs Single SCR Alt VS-30TPS12-M3
Datasheet: VS-30TPS12L-M3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.9095 ea
Line Total: USD 2.91

Availability - 801
Ship by Wed. 07 Aug to Fri. 09 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
801
Ship by Wed. 07 Aug to Fri. 09 Aug
MOQ : 1
Multiples : 1
1 : USD 2.9095
10 : USD 2.4495
100 : USD 1.978
500 : USD 1.7135
1000 : USD 1.472
5000 : USD 1.4605

   
Manufacturer
Product Category
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
On-State RMS Current - It RMS
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Mounting Style
Package / Case
Packaging
Minimum Operating Temperature
Maximum Operating Temperature
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We are delighted to provide the VS-30TPS12L-M3 from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-30TPS12L-M3 and other electronic components in the SCRs category and beyond.

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VS-30TPS12L-M3 www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 30 A FEATURES 2 Designed and qualified according to (A) JEDEC - JESD 47 Flexible solution for reliable AC power rectification 1 Easy control peak current at charger power up to 2 reduce passive / electromechanical components 3 Material categorization: for definitions of compliance 1 (K) (G) 3 TO-247AD 3L please see www.vishay.com/doc 99912 APPLICATIONS PRIMARY CHARACTERISTICS Typical usage is in input rectification crowbar (soft start) and AC switch in motor control, UPS, welding and battery I 20 A T(AV) charge V /V 1200 V DRM RRM V 1.3 V TM DESCRIPTION I 45 mA GT The VS-30TPS12L-M3 high voltage series of silicon T -40 C to +125 C J controlled rectifiers are specifically designed for medium Package TO-247AD 3L power switching and phase control applications. Circuit configuration Single SCR AEC-Q101 qualified P/N available (VS-30TPS12LHM3). MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS I Sinusoidal waveform 20 T(AV) A I 30 RMS V /V 1200 V RRM DRM I 300 A TSM V 20 A, T = 25 C 1.3 V T J dv/dt 500 V/s di/dt 150 A/s T -40 to +125 C J VOLTAGE RATINGS V /V , MAXIMUM V , MAXIMUM RRM DRM RSM I /I RRM DRM REPETITIVE PEAK AND NON-REPETITIVE PEAK PART NUMBER AT 125 C OFF-STATE VOLTAGE REVERSE VOLTAGE mA V V VS-30TPS12L-M3 1200 1300 10 Revision: 31-Jul-2018 Document Number: 95991 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-30TPS12L-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average on-state current I T = 95 C, 180 conduction half sine wave 20 T(AV) C Maximum RMS on-state current I 30 RMS A 10 ms sine pulse, rated V applied 250 Maximum peak, one-cycle RRM I TSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 300 10 ms sine pulse, rated V applied 310 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 442 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 4420 A s Maximum on-state voltage drop V 20 A, T = 25 C 1.3 V TM J On-state slope resistance r 12 m t T = 125 C J Threshold voltage V 1.0 V T(TO) T = 25 C 0.5 Maximum reverse and direct leakage J I /I V = rated V / V RM DM R RRM DRM current T = 125 C 10 J mA Maximum holding current I Anode supply = 6 V, resistive load, initial I = 1 A, T = 25 C 150 H T J Maximum latching current I Anode supply = 6 V, resistive load, T = 25 C 200 L J Maximum rate of rise of off-state voltage dv/dt T = T maximum, linear to 80 % V , R -k = open 500 V/s J J DRM g Maximum rate of rise of turned-on current di/dt 150 A/s TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum peak gate power P 8.0 GM W Maximum average gate power P 2.0 G(AV) Maximum peak positive gate current +I 1.5 A GM Maximum peak negative gate voltage -V 10 V GM Anode supply = 6 V, resistive load, T = -10 C 60 J Maximum required DC gate current I Anode supply = 6 V, resistive load, T = 25 C 45 mA GT J to trigger Anode supply = 6 V, resistive load, T = 125 C 20 J Anode supply = 6 V, resistive load, T = -10 C 2.5 J Maximum required DC gate voltage V Anode supply = 6 V, resistive load, T = 25 C 2.0 GT J to trigger V Anode supply = 6 V, resistive load, T = 125 C 1.0 J Maximum DC gate voltage not to trigger V 0.25 GD T = 125 C, V = rated value J DRM Maximum DC gate current not to trigger I 2.0 mA GD SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Typical turn-on time t T = 25 C 0.9 gt J Typical reverse recovery time t 4 s rr T = 125 C J Typical turn-off time t 110 q Revision: 31-Jul-2018 Document Number: 95991 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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