VS-3EGH06-M35BT Vishay

333 3 VS-3EGH06-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 3 A FRED Pt FEATURES Hyperfast recovery time, reduced Q an d rr soft recovery 175 C maximum operating junction temperature Cathode Anode For PFC CRM/CCM, snubber operation Low forward voltage drop Low leakage current Meets MSL level 1, per J-STD-020, LF maximum peak SMB (DO-214AA) of 260 C -JESD 47 Designed and qualified according to JEDEC Material categorization: for definitions of compliance LINKS TO ADDITIONAL RESOURCES please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS 3D Models State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. PRIMARY CHARACTERISTICS The planar structure and the platinum doped life time control I 3 A F(AV) guarantee the best overall performance, ruggedness and V 600 V R reliability characteristics. V at I 1.2 V F F These devices are intended for use in PFC Boost stage in the AC/DC section of SMPS, inverters or as freewheeling t typ. 35 ns rr diodes. T max. 175 C J Their extremely optimized stored charge and low recovery Package SMB (DO-214AA) current minimize the switching losses and reduce power dissipation in the switching element and snubbers. Circuit configuration Single MECHANICAL DATA Case: SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002 Polarity: color band denotes the cathode end ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 600 V RRM (1) Average rectified forward current I T = 90 C 3 F(AV) L A Non-repetitive peak surge current I T = 25 C, 6 ms square pulse 55 FSM J Operating junction and storage temperatures T , T -55 to +175 C J Stg Note (1) Mounted on PCB with minimum pad size ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 600 - - BR R R I = 3 A - 1.4 1.7 V F Forward voltage V F I = 3 A, T = 150 C - 1.20 1.35 F J V = V rated - - 3 R R Reverse leakage current I A R T = 150 C, V = V rated - - 100 J R R Junction capacitance C V = 600 V - 3.7 - pF T R Revision: 17-Mar-2021 Document Number: 94773 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD DVS-3EGH06-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 100 A/s, V = 30 V - 35 - F F R I = 1.0 A, dI /dt = 50 A/s, V = 30 V - 40 - F F R Reverse recovery time t I = 0.5 A, I = 1 A, I = 0.25 A - - 45 ns rr F R rr T = 25 C -25- J T = 125 C - 36 - J I = 3 A F T = 25 C - 3.9 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 5.3 - J V = 390 V R T = 25 C - 50 - J Reverse recovery charge Q nC rr T = 125 C - 98 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature T , T -55 - 175 C J Stg range (1) Thermal resistance, junction to mount R --18 thJM C/W (1) Thermal resistance, junction to ambient R -- 90 thJA 0.1 g Approximate Weight 0.003 oz. Marking device Case style SMB (DO-214AA) 3H6 Note (1) Mounted on PCB with minimum pad size 100 100 175 C 150 C 10 125 C 1 T = 175 C 10 J T = 150 C J 0.1 25 C 0.01 1 T = 125 C J T = 25 C J 0.001 T = -40 C J 0.0001 0.1 0 100 200 300 400 500 600 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 V - Reverse Voltage (V) R V - Forward Voltage Drop (V) F Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 17-Mar-2021 Document Number: 94773 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R