VS-E7MH0112-M3/I Vishay

333 3 VS-E7MH0112-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 1 A FRED Pt FEATURES Hyperfast recovery time, reduced Q , and soft rr recovery 175 C maximum operating junction temperature Cathode Anode Specified for output and snubber operation Low forward voltage drop Low leakage current SMA (DO-214AC) Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Meets JESD 201 class 2 whisker test LINKS TO ADDITIONAL RESOURCES Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3D Models DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time. PRIMARY CHARACTERISTICS The planar structure and the platinum doped life time control I 1 A F(AV) guarantee the best overall performance, ruggedness, and V 1200 V R reliability characteristics. V at I 1.10 V F F These devices are intended for use in snubber, boost, t 75 ns rr lighting, as high frequency rectifiers, and freewheelin g T max. 175 C J diodes. Package SMA (DO-214AC) Their extremely optimized stored charge and low recovery Circuit configuration Single current minimize the switching losses and reduce power dissipation in the switching element. MECHANICAL DATA Case: SMA (DO-214AC) Molding compound meets UL 94 V-0 flammability rating Terminals: matte tin plated leads, solderable per J-STD-002 Polarity: color band denotes cathode end ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS Peak repetitive reverse voltage V 1200 V RRM Average rectified forward current I T = 144 C, D = 0.5 1 F(AV) Sp A Non-repetitive peak surge current I T = 25 C, 8.3 ms sine pulse 21 FSM J Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 1200 - - BR R R I = 1 A - 1.35 1.80 F V Forward voltage, per diode V I = 1 A, T = 125 C - 1.17 1.55 F F J I = 1 A, T = 150 C - 1.10 1.44 F J V = V rated - - 5 R R Reverse leakage current, per diode I A R T = 150 C, V = V rated - - 50 J R R Junction capacitance C V = 1200 V - 3.5 - pF T R Revision: 06-Apr-2022 Document Number: 96673 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD DVS-E7MH0112-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 0.5 A, I = 1 A, I = 0.25 A - - 75 F R rr Reverse recovery time t T = 25 C -99 - ns rr J T = 125 C - 137 - J I = 1 A, F T = 25 C - 3.5 - J Peak recovery current I dI /dt = 200 A/s, A RRM F T = 125 C - 4.5 - J V = 800 V R T = 25 C - 150 - J Reverse recovery charge Q nC rr T = 125 C - 286 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature range T , T -55 - 175 C J Stg Device mounted on PCB with (1) Thermal resistance, junction to mount R -15 18 C/W thJM 2 x 3.5 mm soldering lands Device mounted on PCB with Thermal resistance, junction to ambient R - 110 - C/W thJA recommended pad size Approximate weight 0.07 g Marking device Case style SMA (DO-214AC) 1H12 Note (1) Thermal resistance junction to mount follows JEDEC 51-14 transient dual interface test method (TDIM) 100 100 175 C 10 150 C 10 1 125 C T = 175 C J 0.1 0.01 25 C 1 T = 150 C J T = 25 C J 0.001 T = -40 C J 0.1 0.0001 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0 200 400 600 800 1000 1200 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 06-Apr-2022 Document Number: 96673 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R