33 3 VSKY05201006 www.vishay.com Vishay Semiconductors Schottky Rectifier Surface-Mount FlipKY Gen 2 FEATURES Schottky diode for high-speed switching Very low dimensions: 1.0 mm x 0.6 mm x 0.29 mm 0.5 A forward current Low forward voltage drop (typ. 400 mV at 0.5 A) Low reverse current (< 15 A at 10 V) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESIGN SUPPORT TOOLS AVAILABLE 3D Models Models Related Footprints Documents PARTS TABLE MINIMUM CIRCUIT PACKAGE TYPE TAPED UNITS PER REEL PART ORDERING CODE WEIGHT ORDER CONFIGURATION NAME CODE (8 mm TAPE ON 7 REEL) QUANTITY VSKY05201006 VSKY05201006-G4-08 Single CLP1006-2L 2A 0.400 mg 10 000 10 000 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Maximum repetitive reverse voltage V 20 V RRM Maximum average forward rectified current I 0.5 A F(AV) Surge forward current 8.3 ms half sine-wave I 12 A FSM Power dissipation Footprint acc. fig. 4 P 450 mW tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Acc. JEDEC 51-3 Thermal resistance junction to ambient air R 280 K/W thJA footprint acc fig. 4 Maximum operating junction temperature T 150 C j Storage temperature range T -65 to +150 C stg ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL TYP. MAX. UNIT V = 10 V I -15 A R R Leakage current V = 20 V I -75 A R R I = 100 mA V 0.335 0.345 V F F Forward voltage I = 0.5 A V 0.400 0.430 V F F Diode capacitance V = 0 V, f = 1 MHz C 150 - pF R D Rev. 1.3, 27-Feb-2019 Document Number: 85938 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DD D MM XX YYVSKY05201006 www.vishay.com Vishay Semiconductors RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A Axis Title Axis Title 160 10000 1000 10000 f = 1 MHz T = 150 C J 140 125 C 120 100 1000 1000 100 25 C 10 80 50 C 75 C 60 100 100 100 C 1 40 20 0.1 10 0 10 0 0.1 0.2 0.3 0.4 0.5 010 20 V (V) F V (V) R 2nd line 2nd line Fig. 1 - Typical Forward Current vs. Forward Voltage Fig. 3 - Typical Capacitance vs. Reverse Voltage Axis Title Axis Title 100 000 10000 1000 10000 T = 150 C j 10 000 125 C 1000 1000 100 1000 100 C 75 C 100 50 C 10 100 10 100 25 C 1 0.1 10 1 10 0 5 10 15 20 0.001 0.01 0.1 1 10 100 1000 V (V) R t - Pulse Width (s) p 2nd line 2nd line Fig. 2 - Typical Reverse Leakage Current vs. Reverse Voltage Fig. 4 - Typical Thermal Impedance vs. Time Rev. 1.3, 27-Feb-2019 Document Number: 85938 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 2nd line 2nd line I (A) I (mA) F R 1st line 1st line 2nd line 2nd line 2nd line 2nd line Z - Thermal Impedance (K/W) C (pF) D th 1st line 1st line 2nd line 2nd line