VSMA1094250 Vishay

333 3 VSMA1094250 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, Surface Emitter Technology up to 5.0 A. FEATURES Package type: surface-mount Package form: high power SMD with lens Dimensions (L x W x H in mm): 3.4 x 3.4 x 2.9 Centroid wavelength: = 940 nm centroid Angle of half intensity: = 28 Designed for high drive currents: up to 1.5 A (DC) and up to 5 A (pulsed) Low thermal resistance: 6 K/W < R < 9 K/W thJSP ESD: up to 5 kV (according to ANSI / ESDA / JEDEC JS-001) Floor life: 168 h, MSL 3, according to J-STD-020 LINKS TO ADDITIONAL RESOURCES Lead (Pb)-free reflow soldering Material categorization: for definitions of compliance 3D Models please see www.vishay.com/doc 99912 DESCRIPTION APPLICATIONS TM As part of the SurfLight portfolio, the VSMA1094250 is Driver and occupant monitoring an infrared, 940 nm emitting diode. It features a double Eye tracking stack emitter chip for highest radiant power. The 42 mil chip Safety and security, CCTV size allows 1.5 A DC operation and supports pulsed currents PRODUCT SUMMARY COMPONENT I (mW/sr) at I = 1.0 A () (nm) (nm) t (ns) e F p centroid r VSMA1094250 1250 28 950 940 10 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMA1094250 Tape and reel MOQ: 600 pcs, 600 pcs/reel High power with lens Note MOQ: minimum order quantity Rev. 1.2, 17-Nov-2021 Document Number: 80299 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VSMA1094250 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 1.5 A F Surge forward current t = 100 s I 5A p FSM Power dissipation P 5W V Junction temperature T 145 C j Ambient temperature range T -40 to +125 C amb Storage temperature range T -40 to +125 C stg Soldering temperature According to Fig. 11, J-STD020E T 260 C sd (1) Thermal resistance junction to solder point real JESD 51 R 6 to 9 K/W thJSP,real Thermal resistance junction to ambient real JESD 51 R 150 K/W thJA,real ESD sensitivity According to ANSI / ESDA / JEDEC JS-001 V 5kV ESD Note (1) Thermal resistance junction to solder point real has been measured with the part mounted on an ideal heatsink and the optical output power has been deducted from the total electrical power dissipation Axis Title Axis Title 6 10000 1.6 10000 R = 6 K/W thJSP 1.4 5 R = 6 K/W thJSP 1.2 4 1000 1000 1.0 R = 9 K/W thJSP R = 9 K/W thJSP 3 0.8 0.6 2 100 100 0.4 1 0.2 0 10 0 10 0 20406080 100 120 140 0 20406080 100 120 140 T - Solder Point Temperature (C) T - Solder Point Temperature (C) SP SP Fig. 1 - Power Dissipation Limit vs. Solder Point Temperature Fig. 2 - Forward Current Limit vs. Solder Point Temperature Rev. 1.2, 17-Nov-2021 Document Number: 80299 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 2nd line P - Power Dissipation (W) V 1st line 2nd line 2nd line I - Forward Current (A) F 1st line 2nd line