VSSAF3M10-M3/H Vishay

333 3 VSSAF3M10 www.vishay.com Vishay General Semiconductor Surface-Mount TMBS (Trench MOS Barrier Schottky) Rectifier FEATURES Available eSMP Series Very low profile - typical height of 0.95 mm Ideal for automated placement Trench MOS Schottky technology Low power losses, high efficiency Low forward voltage drop Bottom View Top View Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C SlimSMA (DO-221AC) AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 Cathode Anode Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 LINKS TO ADDITIONAL RESOURCES TYPICAL APPLICATIONS For use in high frequency inverters, freewheeling, DC/DC 3D Models converters, and polarity protection in commercial, industrial, and automotive applications. PRIMARY CHARACTERISTICS MECHANICAL DATA I 3 A F(AV) Case: SlimSMA (DO-221AC) V 100 V RRM Molding compound meets UL 94 V-0 flammability rating I 80 A FSM Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and V at I = 3 A (125 C) 0.56 V F F AEC-Q101 qualified T max. 175 C J Terminals: matte tin plated leads, solderable per Package SlimSMA (DO-221AC) J-STD-002 and JESD 22-B102 Circuit configuration Single M3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VSSAF3M10 UNIT Device marking code 3M10 Maximum repetitive peak reverse voltage V 100 V RRM (1) I 2.3 F(AV) Maximum DC forward current A (2) I 3 F(AV) Peak forward surge current 8.3 ms single half sine-wave I 80 A FSM superimposed on rated load Operating junction and storage temperature range T , T -40 to +175 C J STG Notes (1) Free air, mounted on recommended copper pad area (2) Mounted on 30 mm x 30 mm pad area Revision: 16-Apr-2020 Document Number: 87507 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VSSAF3M10 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 1.5 A 0.54 - F T = 25 C A I = 3 A 0.64 0.72 F (1) Instantaneous forward voltage per V V F I = 1.5 A 0.46 - F T = 125 C A I = 3 A 0.56 0.64 F T = 25 C 0.01 - A (2) V = 70 V I mA R R T = 125 C 0.7 - A Reverse current T = 25 C -0.2 A V = 100 V I mA R R T = 125 C 1.5 3.5 A Typical junction capacitance 4.0 V, 1 MHz C 364 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise specified) A PARAMETER SYMBOL VSSAF3M10 UNIT (1)(2) R 115 JA Typical thermal resistance C/W (3) R 12 JM Notes (1) Free air, mounted on recommended PCB, 2 oz. pad area thermal resistance R - junction to ambient, R - junction to mount JA JM (2) The heat generated must be less than thermal conductivity from junction-to-ambient: dP /DT < 1/R D J JA (3) Mounted on 30 mm x 30 mm pad area ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE VSSAF3M10-M3/H 0.032 H 3500 7 diameter plastic tape and reel VSSAF3M10-M3/I 0.032 I 14 000 13 diameter plastic tape and reel (1) VSSAF3M10HM3/H 0.032 H 3500 7 diameter plastic tape and reel (1) VSSAF3M10HM3/I 0.032 I 14 000 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 16-Apr-2020 Document Number: 87507 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000