VSSB410S www.vishay.com Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES Low profile package TMBS Ideal for automated placement Trench MOS Schottky technology Low power losses, high efficiency Low forward voltage drop Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 DO-214AA (SMB) TYPICAL APPLICATIONS For use in low voltage, high frequency inverters, freewheeling, DC/DC converters, and polarity protection PRIMARY CHARACTERISTICS applications. Package DO-214AA (SMB) I 4.0 A F(AV) MECHANICAL DATA V 100 V RRM Case: DO-214AA (SMB) I 80 A FSM Molding compound meets UL 94 V-0 flammability rating E 50 mJ AS Base P/N-E3 - RoHS-compliant, commercial grade V at I = 4.0 A 0.61 V F F Terminals: Matte tin plated leads, solderable per T max. 150 C J J-STD-002 and JESD 22-B102 Diode variations Single die E3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VSSB410S UNIT Device marking code V4B Maximum repetitive peak reverse voltage V 100 V RRM (1) I 4.0 F Maximum DC forward current A (2) I 1.9 F Peak forward surge current 10 ms single half sine-wave I 80 A FSM superimposed on rated load Non-repetitive avalanche energy E 50 mJ AS at T = 25 C, L = 60 mH J Peak repetitive reverse current at t = 2 s, 1 kHz, p I 1.0 A RRM T = 38 C 2 C J Operating junction and storage temperature range T , T -40 to +150 C J STG Notes (1) Mounted on 14 mm x 14 mm pad areas, 1 oz. FR4 PCB (2) Free air, mounted on recommended copper pad area Revision: 05-Nov-13 Document Number: 89140 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSSB410S www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage I = 1.0 mA T = 25 C V 100 (minimum) - V R A BR T = 25 C 0.68 0.77 A (1) Instantaneous forward voltage I = 4.0 A V V F F T = 125 C 0.61 0.69 A T = 25 C 1.5 - A A V = 70 V R T = 125 C 1.2 - mA A (2) Reverse current I R T = 25 C 7.0 250 A A V = 100 V R T = 125 C 3.6 20 mA A Typical junction capacitance 4.0 V, 1 MHz C 230 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VSSB410S UNIT (1) R 120 JA Typical thermal resistance C/W (2) R 15 JM Notes (1) Free air, mounted on recommended PCB 1 oz. pad area. Thermal resistance R - junction to ambient JA (2) Units mounted on PCB with 14 mm x 14 mm copper pad areas. R - junction to mount JM ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE VSSB410S-E3/52T 0.096 52T 750 7 diameter plastic tape and reel VSSB410S-E3/5BT 0.096 5BT 3200 13 diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 5.0 3.2 D = 0.5 D = 0.8 4.5 2.8 D = 0.3 D = 0.2 4.0 2.4 3.5 D = 1.0 2.0 3.0 D = 0.1 2.5 1.6 2.0 1.2 T 1.5 0.8 1.0 D = t /T t 0.4 p p T Measured at Terminal 0.5 M 0 0 0 25 50 75 100 125 150 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 T - Mount Temperature (C) Average Forward Current (A) M Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 05-Nov-13 Document Number: 89140 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)