VSSC520S-M3 www.vishay.com Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES Low profile package TMBS Ideal for automated placement Trench MOS Schottky technology Low power losses, high efficiency Low forward voltage drop Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C DO-214AB (SMC) Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS For use in high frequency converters, freewheeling diodes, PRIMARY CHARACTERISTICS DC/DC converters and polarity protection applications. I 5.0 A F(AV) V 200 V RRM MECHANICAL DATA I 100 A FSM Case: DO-214AB (SMC) V at I = 5.0 A 0.67 V Molding compound meets UL 94 V-0 flammability rating F F Base P/N-M3 - halogen-free and RoHS-compliant, T max. 150 C J commercial grade Package DO-214AB (SMC) Terminals: Matte tin plated leads, solderable per Diode variation Single die J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VSSC520S UNIT Device marking code V5D Maximum repetitive peak reverse voltage V 200 V RRM (1) I 5.0 F Maximum DC forward current A (2) I 2.2 F Peak forward surge current 10 ms single half sine-wave I 100 A FSM superimposed on rated load Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -40 to +150 C J STG Notes (1) Units mounted on PCB with 25 mm x 25 mm copper pad areas, 1 oz. FR4 PCB (2) Free air, mounted on recommended PCB 1 oz. pad area Revision: 28-Nov-13 Document Number: 89318 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSSC520S-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT T = 25 C 1.19 1.70 A (1) Instantaneous forward voltage I = 5.0 A V V F F T = 125 C 0.67 0.75 A T = 25 C 2.0 - A A V = 180 V R T = 125 C 2.0 - mA A (2) Reverse current per diode I R T = 25 C 4 200 A A V = 200 V R T = 125 C 3.2 25 mA A Typical junction capacitance 4.0 V, 1 MHz C 280 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VSSC520S UNIT (1) R 95 JA Typical thermal resistance C/W (2) R 9 JM Notes (1) Free air, mounted on recommended PCB 1 oz. pad area thermal resistance R - junction to ambient JA (2) Units mounted on PCB with 25 mm x 25 mm copper pad areas thermal resistance R - junction to mount JM ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE VSSC520S-M3/57T 0.235 57T 850 7 diameter plastic tape and reel VSSC520S-M3/9AT 0.235 9AT 3500 13 diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 6 4.5 D = 0.5 D = 0.8 4 D = 0.3 5 D = 0.2 3.5 4 3.0 D = 1.0 2.5 D = 0.1 3 2.0 T 2 1.5 1.0 1 0.5 T Measured at Terminal D = t /T t M p p 0 0 0 25 50 75 100 125 150 175 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 T - Mount Temperature (C) Average Forward Current (A) M Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 28-Nov-13 Document Number: 89318 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)