VS-SD1053C..L Series www.vishay.com Vishay Semiconductors Fast Recovery Diodes (Hockey PUK Version), 920 A, 1050 A FEATURES High power fast recovery diode series 2.0 s to 3.0 s recovery time High voltage ratings up to 3000 V High current capability Optimized turn-on and turn-off characteristics Low forward recovery Fast and soft reverse recovery Press PUK encapsulation Case style conform to JEDEC B-PUK (DO-200AB) B-PUK (DO-200AB) Maximum junction temperature 150 C Designed and qualified for industrial level PRIMARY CHARACTERISTICS Material categorization: for definitions of compliance I 920 A, 1050 A F(AV) please see www.vishay.com/doc 99912 Package B-PUK (DO-200AB) TYPICAL APPLICATIONS Circuit configuration Single Snubber diode for GTO High voltage freewheeling diode Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS SD1053C..L PARAMETER TEST CONDITIONS UNITS S20 S30 1050 920 A I F(AV) T 55 55 C hs I 1940 1700 F(RMS) 50 Hz 15 000 13 000 A I FSM 60 Hz 15 700 13 610 V Range 1800 to 2500 1800 to 3000 V RRM 2.0 3.0 s t rr T 25 J C T -40 to +150 J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM REPETITIVE V , MAXIMUM NON-REPETITIVE I MAXIMUM RRM RSM RRM VOLTAGE TYPE NUMBER PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT T = T MAXIMUM J J CODE V V mA 18 1800 1900 22 2200 2300 VS-SD1053C..S20L 24 2400 2500 25 2500 2600 18 1800 1900 50 22 2200 2300 VS-SD1053C..S30L 25 2500 2600 28 2800 2900 30 3000 3100 Revision: 11-Jan-18 Document Number: 93167 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-SD1053C..L Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION SD1053C..L PARAMETER SYMBOL TEST CONDITIONS UNITS S20 S30 1050 (450) 920 (390) A Maximum average forward current 180 conduction, half sine wave I F(AV) at heatsink temperature Double side (single side) cooled 55 (85) 55 (85) C Maximum RMS forward current I 25 C heatsink temperature double side cooled 1940 1700 F(RMS) t = 10 ms 15 000 13 000 No voltage t = 8.3 ms reapplied 15 700 13 610 A Maximum peak, one-cycle forward, I FSM non-repetitive surge current t = 10 ms 12 620 10 930 100 % V RRM reapplied t = 8.3 ms 13 210 11 450 Sinusoidal half wave, initial T = T maximum t = 10 ms No voltage J J 1125 845 reapplied t = 8.3 ms 1027 772 2 2 2 Maximum I t for fusing I t kA s t = 10 ms 796 598 100 % V RRM reapplied t = 8.3 ms 727 546 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 11 250 8450 kA s Low level value of threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 1.34 1.51 F(TO)1 F(AV) F(AV) J J V High level value of threshold voltage V (I > x I ), T = T maximum 1.48 1.67 F(TO)2 F(AV) J J Low level value of forward r (16.7 % x x I < I < x I ), T = T maximum 0.37 0.50 f1 F(AV) F(AV) J J slope resistance m High level value of forward r (I > x I ), T = T maximum 0.33 0.45 f2 F(AV) J J slope resistance I = 1500 A, T = T maximum, pk J J Maximum forward voltage drop V 1.90 2.26 V FM t = 10 ms sinusoidal wave p RECOVERY CHARACTERISTICS MAXIMUM VALUE TYPICAL VALUES TEST CONDITIONS AT T = 25 C AT T = 150 C J J I I FM pk CODE t t AT 25 % I SQUARE dI/dt V t AT 25 % I Q I rr rr RRM r rr RRM rr rr PULSE (A/s) (V) (s) (C) (A) (s) t (A) dir dt Q rr S20 2.0 4.0 400 180 1000 100 - 50 I RM(REC) S30 3.0 4.5 550 230 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS Maximum junction operating T , T -40 to 150 C J Stg and storage temperature range Maximum thermal resistance, DC operation single side cooled 0.073 R K/W thJ-hs case junction to heatsink DC operation double side cooled 0.031 Mounting force, 10 % 14 700 (1500) N (kg) Approximate weight 255 g Case style See dimensions - link at the end of datasheet B-PUK (DO-200AB) R CONDUCTION thJ-hs SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION CONDUCTION ANGLE TEST CONDITIONS UNITS SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180 0.009 0.008 0.006 0.006 120 0.011 0.011 0.011 0.011 90 0.014 0.014 0.015 0.015 T = T maximum K/W J J 60 0.020 0.021 0.021 0.022 30 0.036 0.036 0.036 0.036 Note The table above shows the increment of thermal resistance R when devices operate at different conduction angles than DC thJ-hs Revision: 11-Jan-18 Document Number: 93167 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000