VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes (MAGN-A-PAK Power Modules), 250 A to 320 A FEATURES High voltage Electrically isolated base plate 3000 V isolating voltage RMS Industrial standard package Simplified mechanical designs, rapid assembly High surge capability Large creepage distances UL approved file E78996 Designed and qualified for industrial level MAGN-A-PAK Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS This VS-VSK series of MAGN-A-PAKs uses high voltage PRIMARY CHARACTERISTICS power diodes in two basic configurations. The I 250 A to 320 A F(AV) semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies Type Modules - diode, high voltage to be built. They can be interconnected to form single phas e Package MAGN-A-PAK or three phase bridges and the single diode module can be Circuit Two diodes doubler circuit, used in conjunction with the thyristor modules as a configuration two diodes common cathode, single diode freewheel diode. These modules are intended for general purpos e applications such as battery chargers, welders and plating equipment and where high voltage and high current ar e required (motor drives, etc.) MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VSK.250.. VSK.270.. VSK.320.. UNITS 250 270 320 A I F(AV) T 100 100 100 C C I 393 424 502 F(RMS) 50 Hz 7015 8920 10 110 A I FSM 60 Hz 7345 9430 10 580 50 Hz 246 398 511 2 2 I t kA s 60 Hz 225 363 466 2 2 I t 2460 3980 5110 kA s V 400 to 2000 400 to 3000 400 to 2000 V RRM T -40 to +150 C J Revision: 03-Apr-2019 Document Number: 93581 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V MAXIMUM REPETITIVE V , MAXIMUM NON-REPETITIVE I MAXIMUM RRM, RSM RRM VOLTAGE TYPE NUMBER PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C CODE V V mA VS-VSK.270 04 400 500 VS-VSK.320 08 800 900 VS-VSK.250 12 1200 1300 50 VS-VSK.270 16 1600 1700 VS-VSK.320 20 2000 2100 VS-VSK.270 30 3000 3100 FORWARD CONDUCTION VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS VSK.250 VSK.270 VSK.320 250 270 320 A Maximum average forward I 180 conduction, half sine wave F(AV) current at case temperature 100 100 100 C Maximum RMS forward current I As AC switch 393 424 502 F(RMS) t = 10 ms 7015 8920 10 110 No voltage reapplied t = 8.3 ms 7345 9340 10 580 A Maximum peak, one-cycle forward, I FSM non-repetitive surge current 100 % t = 10 ms 5900 7500 8500 V RRM Sinusoidal half wave, t = 8.3 ms 6180 7850 8900 reapplied initial t = 10 ms 246 398 511 T = T maximum No voltage J J reapplied t = 8.3 ms 225 363 466 2 2 2 Maximum I t for fusing I t kA s 100 % t = 10 ms 174 281 361 V RRM t = 8.3 ms 159 257 330 reapplied 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 2460 3980 5110 kA s (16.7 % x x I < I < x I ), F(AV) F(AV) Low level value of threshold voltage V 0.79 0.74 0.69 F(TO)1 T = T maximum J J V High level value of threshold voltage V (I > x I ), T = T maximum 0.92 0.87 0.86 F(TO)2 F(AV) J J (16.7 % x x I < I < x I ), F(AV) F(AV) Low level forward slope resistance r 0.63 0.94 0.59 f1 T = T maximum J J m High level forward slope resistance r (I > x I ), T = T maximum 0.49 0.81 0.44 f2 F(AV) J J I = x I , T = T maximum, 180 conduction FM F(AV) J J Maximum forward voltage drop V 1.29 1.48 1.28 V FM 2 Average power = V x I + r x (I ) F(TO) F(AV) f F(RMS) BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak reverse I T = 150 C 50 mA RRM J leakage current RMS insulation voltage V 50 Hz, circuit to base, all terminals shorted, t = 1 s 3000 V INS Revision: 03-Apr-2019 Document Number: 93581 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000