VS-VSKU105.., VS-VSKV105.. Series www.vishay.com Vishay Semiconductors AAP Gen 7 (TO-240AA) Power Modules Thyristor/Thyristor, 105 A FEATURES High voltage Industrial standard package UL approved file E78996 Low thermal resistance Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 ADD-A-PAK BENEFITS Excellent thermal performances obtained by the usage of PRIMARY CHARACTERISTICS exposed direct bonded copper substrate I 105 A T(AV) Up to 1600 V Type Modules - thyristor, standard High surge capability Package AAP Gen 7 (TO-240AA) Easy mounting on heatsink MECHANICAL DESCRIPTION ELECTRICAL DESCRIPTION The AAP Gen 7 (TO-240AA), new generation of AAP These modules are intended for general purpose high module, combines the excellent thermal performances voltage applications such as high voltage regulated power obtained by the usage of exposed direct bonded copper supplies, lighting circuits, temperature and motor speed substrate, with advanced compact simple package solution control circuits, UPS and battery charger. and simplified internal structure with minimized number of interfaces. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I 85 C 105 T(AV) I 165 T(RMS) A 50 Hz 2000 I TSM 60 Hz 2094 50 Hz 20 2 2 I t kA s 60 Hz 18.26 2 2 I t 200 kA s V Range 400 to 1600 V RRM T -40 to +130 C Stg T -40 to +130 C J Revision: 26-Jul-2018 Document Number: 94656 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-VSKU105.., VS-VSKV105.. Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM V , MAXIMUM V , MAXIMUM REPETITIVE RRM RSM DRM I I RRM, DRM VOLTAGE REPETITIVE PEAK NON-REPETITIVE PEAK PEAK OFF-STATE VOLTAGE, TYPE NUMBER AT 130 C REVERSE VOLTAGE REVERSE VOLTAGE GATE OPEN CIRCUIT CODE mA V V V 04 400 500 400 08 800 900 800 VS-VSK.105 15 12 1200 1300 1200 16 1600 1700 1600 ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 180 conduction, half sine wave, Maximum average on-state current I 105 T(AV) T = 85 C C A DC 165 Maximum continuous RMS on-state current I T(RMS) T 78 C C t = 10 ms 2000 No voltage Sinusoidal reapplied t = 8.3 ms 2094 Maximum peak, one-cycle non-repetitive half wave, I A TSM on-state current initial T = t = 10 ms J 1682 100 % V RRM T maximum J reapplied t = 8.3 ms 1760 t = 10 ms 20 No voltage reapplied t = 8.3 ms 18.26 Initial T = J 2 2 2 Maximum I t for fusing I t kA s T maximum J t = 10 ms 14.14 100 % V RRM reapplied t = 8.3 ms 12.91 t = 0.1 ms to 10 ms, no voltage reapplied 2 2 (1) 2 Maximum I t for fusing I t 200 kA s T = T maximum J J (3) Low level 0.98 (2) Maximum value of threshold voltage V T = T maximum V T(TO) J J (4) High level 1.12 (3) Low level 2.7 Maximum value of on-state (2) r T = T maximum m t J J slope resistance (4) High level 2.34 Maximum on-state voltage drop V I = x I T = 25 C 1.8 V TM TM T(AV) J Maximum non-repetitive rate of rise of T = 25 C, from 0.67 V , J DRM dI/dt 150 A/s turned on current I = x I , I = 500 mA, t < 0.5 s, t > 6 s TM T(AV) g r p T = 25 C, anode supply = 6 V, J 250 Maximum holding current I H resistive load, gate open circuit mA Maximum latching current I T = 25 C, anode supply = 6 V, resistive load 400 L J Notes (1) 2 2 I t for time t = I t x t x x (2) 2 Average power = V x I + r x (I ) T(TO) T(AV) t T(RMS) (3) 16.7 % x x I < I < x I AV AV (4) I > x I AV Revision: 26-Jul-2018 Document Number: 94656 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000