Technische Information / technical information Netz-Thyristor T533N Phase Control Thyristor Key Parameters V / V 7500V / 8000V BO RRM I 540A (T =85C) TAVM C I 10500A TSM 3570A (T =55C) C v 1,26V T0 r 1,47m T R 20,0K/kW thJC Clamping Force 15 24kN Max. Diameter 76mm Contact Diameter 50mm Height 35mm For type designation please refer to actual shortform catalog Technische Information / technical information Netz-Thyristor T533N Phase Control Thyristor Elektrische Eigenschaften / electrical properties Hchstzulssige Werte / maximum rated values V 8000 V RRM T = -40C... T Periodische Rckwrts-Spitzensperrspannung vj vj max Kenndaten repetitive peak and reverse voltage Elektrische Eigenschaften I 864 A Durchlastrom-Effektivwert T = 85 C TRMSM C RMS on-state current A Dauergrenzstrom T = 85 C I 540 C TAVM A T = 70 C 675 C average on-state current A T = 55 C 790 C I Stostrom-Grenzwert T = 25 C, t = 10 ms TSM t.b.d. A vj P T = T , t = 10 ms surge current vj vj max P 10500 A It Grenzlastintegral T = 25 C, t = 10 ms t.b.d. 10 As vj P T = T , t = 10 ms It-value vj vj max P 551 10 As A/s Kritische Stromsteilheit DIN IEC 60747-6 (di /dt) 300 T cr f = 50 Hz, P = 40mW, t = 0,5s critical rate of rise of on-state current LM rise V/s Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) 2000 vj vj max D DRM D cr th 5.Kennbuchstabe / 5 letter H critical rate of rise of off-state voltage Charakteristische Werte / characteristic values Schutzzndspannung (statisch) V min. 7500 V T = 25C T BO vj vj max Typischer Degradationsfaktor ist 0,16%/K protective break over voltage fr Tvj = 0C..25C Typical de-rating factor of 0,16%/K is applicable for T = 0C..25C vj Durchlaspannung T = T , i = 1000A, v = 40V v typ. 2,6 V vj vj max T D T on-state voltage max. 2,75 V Schleusenspannung T = T V typ. 1,19 V vj vj max (TO) threshold voltage max. 1,26 V Ersatzwiderstand T = T r typ. 1,38 m vj vj max T slope resistance max. 1,47 m A -3,59185 Durchlakennlinie 100A i 1200A T = T typ. F vj vj max B 0,00234 on-state characteristic C 1,21129 D -0,14343 v A B i C Ln( i 1) D i T A -3,77547 T T T max. B 0,00247 C 1,27455 D -0,15035 minimale Zndlichtleistung T = 25C, v = 40V P max. 40 mW vj D LM minimum gate trigger light power Haltestrom T = 25C I max. 100 mA vj H holding current Einraststrom T = 25C, v = 40V, I max. 1 A vj D L latching current P = 40mW, t = 0,5s LM rise Rckwrts-Sperrstrom T = T i max. 200 mA vj vj max R reverse blocking current v = V R RRM Zndverzug DIN IEC 60747-6 t max. 5 s gd T = 25 C, vD = 1000V , gate controlled delay time vj P = 40mW, t = 0,5s LM rise date of publication: 23.01.2014 prepared by: TM revision: 3.0 approved by: JP Date of Publication: 2014-01-23 Revision: 3.0 Seite/page: 2/9