INCH POUND
The documentation and process conversion
measures necessary to comply with this revision
MIL-PRF-19500/502E
shall be completed by 4 December 2008.
4 September 2008
SUPERSEDING
MIL-PRF-19500/502D
12 March 2004
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, POWER,
TYPES 2N6058 AND 2N6059, JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, Darlington, silicon, power transistors.
Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (similar to TO-3).
1.3 Maximum ratings at T = +25 C unless otherwise specified.
C
P (1) P V V V I I T and T
T T CBO CEO EBO C B J STG
Type T = T =
C C
+25 C +100 C
W W V dc V dc V dc A dc A dc
C
2N6058 150 75 80 80 5 12 0.2 -55 to +175
2N6059 150 75 100 100 5 12 0.2 -55 to +175
(1) Derate linearly at 1.00 W/C above T > +25 C.
C
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of
g the ASSIST Online database at MIL-PRF-19500/502E
* 1.4 Primary electrical characteristics at T = +25 C unless otherwise specified.
C
h (1) h (1) h |h | C
FE2 FE3 fe fe obo R
JC
V = 3 V dc V = 3 V dc V = 3 V dc V = 3 V dc 100 kHz f 1 MHz
CE CE CE CE
Limit I = 6 A dc I = 12 A dc I = 5 A dc I = 5 A dc V = 10 V dc
C C C C CB
f = 1 kHz f = 1 MHz I = 0
E
pF
C/W
Min 1,000 150 1,000 10
Max 18,000 250 300
1.0
V (1) V (1) V (1) Pulse response
BE(sat) CE(sat)1 CE(sat)2
Limit I = 12 A dc I = 12 A dc I = 6 A dc
C C C
I = 120 mA dc I = 120 mA dc I = 24 mA dc t t
B B B on off
V dc V dc V dc
s s
Min
Max 4.0 3.0 2.0 2 10
(1) Pulsed see 4.5.1.
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750 - Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at