INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/408H shall be completed by 4 August 2007. 4 May 2007 SUPERSEDING MIL-PRF-19500/408G 21 July 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER, TYPES 2N3715 AND 2N3716, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, high-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1, similar to TO-3. 1.3 Maximum ratings. Unless otherwise specified, T = +25C. C Types P (1) P (2) V V V I I T and T T T R (3) CBO CEO EBO B C J STG JC T = T = A C +25C +25C W W C/W V dc V dc V dc A dc A dc C 2N3715 5.0 117 1.5 80 60 7.0 4.0 10 -65 to +200 2N3716 5.0 117 100 80 7.0 4.0 10 1.5 -65 to +200 (1) Derate linearly 28.57 mW/ C above T = +25C. A (2) See figure 2 for temperature-power derating curves. (3) See figure 3, transient thermal impedance graph. 1.4 Primary electrical characteristics. Unless otherwise specified, T = +25C. C h (1) h (1) V (1) V (1) C h FE2 FE4 BE(SAT)1 CE(SAT)1 obo fe Limit V = 2.0 V dc V = 4.0 V I = 5.0 A dc I = 5.0 A dc V = 10 V V = 10 V dc CE CE C C CB CE I = 3.0 A dc dc I = 0.5 A dc I = 0.5 A dc dc, I = 0 I = 0.5 A dc C B B E C I = 10 A dc f = 1 MHz f = 1 MHz C V dc V dc pF Min 30 5.0 4.0 Max 120 1.5 1.0 500 20 (1) Pulsed (see 4.5.1). Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor dscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at MIL-PRF-19500/408H 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at