The WM02N08F with DFN1006-3L MOSFETs ROHS is a MOSFET transistor manufactured by Wayon. It is a type of P-channel transistor that is designed for high-efficiency, low-power applications. It has a maximum gate-source voltage of -20V, a drain-source current isolation of 8A, and a drain-source resistance (RDS) of 5.1mO. It is lead-free and RoHS-compliant, has an operating temperature range of -55°C ~ 150°C, and is housed in a 3x3 mm dual-flat no-lead (DFN) package. The device is suitable for high-side switching applications and can be used to drive FETs, transistors, and other power components.