BT151S-500R,118 WeEn Semiconductor

BT151S series L and R Thyristors Rev. 05 9 October 2006 Product data sheet 1. Product prole 1.1 General description Passivated thyristors in a SOT428 plastic package. 1.2 Features n High thermal cycling performance n Surface-mounted package n High bidirectional blocking voltage capability 1.3 Applications n Motor control n Static switching n Ignition circuits n Protection circuits 1.4 Quick reference data n V 500 V (BT151S-500L/R) n I 120 A (t = 10 ms) DRM TSM n V 500 V (BT151S-500L/R) n I 12 A RRM T(RMS) n V 650 V (BT151S-650L/R) n I 7.5 A DRM T(AV) n V 650 V (BT151S-650L/R) n I 5 mA (BT151S series L) RRM GT n V 800 V (BT151S-800R) n I 15 mA (BT151S series R) DRM GT n V 800 V (BT151S-800R) RRM 2. Pinning information Table 1. Pinning Pin Description Simplied outline Symbol 1 cathode (K) mb AK 2 anode (A) G 3 gate (G) sym037 mb mounting base connected to anode 2 1 3 SOT428 (DPAK)BT151S series L and R NXP Semiconductors Thyristors 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BT151S-500L DPAK plastic single-ended surface-mounted package 3 leads (one lead cropped) SOT428 BT151S-500R BT151S-650L BT151S-650R BT151S-800R 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit 1 V repetitive peak off-state voltage BT151S-500L BT151S-500R - 500 V DRM 1 BT151S-650L BT151S-650R - 650 V BT151S-800R - 800 V 1 V repetitive peak reverse voltage BT151S-500L BT151S-500R - 500 V RRM 1 BT151S-650L BT151S-650R - 650 V BT151S-800R - 800 V I average on-state current half sine wave T 103 C - 7.5 A T(AV) mb see Figure 1 I RMS on-state current all conduction angles see Figure 4 -12 A T(RMS) and 5 I non-repetitive peak on-state half sine wave T =25 C prior to TSM j current surge see Figure 2 and 3 t=10ms - 120 A t = 8.3 ms - 132 A 2 2 2 ItI t for fusing t = 10 ms - 72 A s dI /dt rate of rise of on-state current I = 20 A I =50mA -50 A/s T TM G dI /dt = 50 mA/s G I peak gate current - 2 A GM V peak reverse gate voltage - 5 V RGM P peak gate power - 5 W GM P average gate power over any 20 ms period - 0.5 W G(AV) T storage temperature - 40 +150 C stg T junction temperature - 125 C j 1 Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15A/s. BT151S SER L R 5 NXP B.V. 2006. All rights reserved. Product data sheet Rev. 05 9 October 2006 2 of 13