WNSC2D16650CWQ WeEn Semiconductor

WNSC2D16650CW Silicon Carbide Diode Rev.01 - 11 March 2021 Product data sheet 1. General description Dual Silicon Carbide Schottky diode in a 3-lead TO247 plastic package, designed alogen-Free RoHS for high frequency switched-mode power h supplies. Lead-Free 2. Features and benefits Highly stable switching performance Extremely fast reverse recovery time Superior in efficiency to Silicon Diode alternatives Reduced losses in associated MOSFET Reduced EMI Reduced cooling requirements RoHS compliant 3. Applications Power factor correction Telecom / Server SMPS UPS PV inverter PC Silverbox LED / OLED TV Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V repetitive peak reverse 650 V RRM voltage I average forward current = 0.5 square-wave pulse T 124 C 16 A O(AV) mb both diodes conducting Fig. 1 Fig. 2 Fig. 3 T junction temperature 175 C j Symbol Parameter Conditions Min Typ Max Unit Static characteristics V forward voltage I = 8 A T = 25 C per diode Fig. 5 - 1.5 1.7 V F F j I = 8 A T = 150 C per diode Fig. 5 - 1.8 2.2 V F j Dynamic characteristics Q recovered charge I = 8 A dI /dt = 500 A/s V = 400 V - 13 - nC r F F R T = 25 C per diode Fig. 7 jWeEn Semiconductors WNSC2D16650CW Silicon Carbide Diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A1 anode A1 A2 2 K cathode 3 A2 anode K sym125 mb mb mounting base connected to cathode 1 2 3 6. Ordering information Table 3. Ordering information Type number Package Orderable part number Packing Small packing Package Package name method quantity version issue date WNSC2D16650CW TO247 WNSC2D16650CWQ Tube 30 TO247N 20-July-2016 7. Marking Table 4. Marking codes Type number Marking codes WNSC2D16650CW WNSC2D 16650CW WNSC2D16650CW All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2021. All rights reserved Product data sheet 11 March 2021 2 / 11