X-On Electronics has gained recognition as a prominent supplier of WNM2016-3/TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. WNM2016-3/TR MOSFETs are a product manufactured by Will Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

WNM2016-3/TR Will Semiconductor

Name: WNM2016-3/TR
Brand: Will Semiconductor
SKU: WNM20163TR_Will Semiconductor
Availability: OutOfStock
Rating: 5 (11 reviews)

WNM2016-3/TR electronic component of Will Semiconductor

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See Product Specifications

Part No.	WNM2016-3/TR
Manufacturer:	Will Semiconductor
Category:	MOSFETs
Description:	MOSFET N Trench 20V 2.9A 1V @ 250uA 47 mÎ© @ 3.6A,4.5V SOT-23 (SOT-23-3) RoHS
Datasheet:
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10: USD 0.0582 ea
Line Total: USD 0.58

Availability - 0

MOQ: 10 Multiples: 10
Pack Size: 10

WNM2016-3/TR More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 17 Jan to Wed. 22 Jan MOQ : 10 Multiples : 10	10 : USD 0.0582 100 : USD 0.0474 300 : USD 0.0421 3000 : USD 0.0339 6000 : USD 0.0305 9000 : USD 0.029

Specifications

Manufacturer Will Semiconductor Will Semiconductor
Product Category MOSFETs MOSFETs
Category MOSFET MOSFET
Rohs y y
Package SOT - 23 (SOT - 23 - 3) SOT - 23 (SOT - 23 - 3)
Brand Category Will Semiconductor Will Semiconductor
Fet Type n trench n trench
Drain To Source Voltagevdss 20 V 20 V
Continuous Drain Current Id @ 25°C 2.9 A 2.9 A
Vgsth Max @ Id 1v @ 250ua 1v @ 250ua
Rds On Max @ Id Vgs 47 m @ 3.6a,4.5v 47 m @ 3.6a,4.5v
Power Dissipation-Max Ta 700 mW 700 mW
Drain Source Voltage Vdss 20 V 20 V
Continuous Drain Current Id 2.9 A 2.9 A
Drain Source On Resistance Rdson@Vgs Id 47 mOhms @4.5V , 3.6A 47 mOhms @4.5V , 3.6A
Power Dissipation Pd 700 mW 700 mW
Gate Threshold Voltage Vgsth@Id 1 V @250uA 1 V @250uA
Type N Channel N Channel

We are delighted to provide the WNM2016-3/TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the WNM2016-3/TR and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The WNM2016-3/TR is an N Channel MOSFET manufactured by Will Semiconductor and is packaged in an SOT-23-3 (3-Pin, Surface Mount) package. It has a breakdown voltage of 20V, a drain current of 2.9A and a drain source ON resistance of 47 m? at a drain current of 3.6A. This device also features a threshold voltage of 1V and an ON resistance of 250uA at a gate voltage of 4.5V. The device is compliant with RoHS environmental regulations.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Will Semicon may also be referenced as

Will Semiconductor
WILLSEMI(Will Semicon)

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