X-On Electronics has gained recognition as a prominent supplier of WPM2006-6/TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. WPM2006-6/TR MOSFETs are a product manufactured by Will Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

WPM2006-6/TR Will Semiconductor

Name: WPM2006-6/TR
Brand: Will Semiconductor
SKU: WPM20066TR_Will Semiconductor
Availability: OutOfStock
Rating: 5 (11 reviews)

WPM2006-6/TR electronic component of Will Semiconductor

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See Product Specifications

Part No.	WPM2006-6/TR
Manufacturer:	Will Semiconductor
Category:	MOSFETs
Description:	MOSFET P Trench 20V 3A 1V @ 250uA 120 mÎ© @ 2.8A,4.5V DFN 2x2-6L RoHS
Datasheet:	WPM2006-6/TR Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.0918 ea
Line Total: USD 0.46

Availability - 0

MOQ: 5 Multiples: 5
Pack Size: 5

WPM2006-6/TR More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 03 Jan to Wed. 08 Jan MOQ : 5 Multiples : 5	5 : USD 0.0918 50 : USD 0.0739 150 : USD 0.065 500 : USD 0.0582 3000 : USD 0.0528 6000 : USD 0.0501

Specifications

Manufacturer Will Semiconductor Will Semiconductor
Product Category MOSFETs MOSFETs
Category MOSFET MOSFET
Rohs y y
Package DFN 2X2 - 6L DFN 2X2 - 6L
Brand Category Will Semiconductor Will Semiconductor
Fet Type p trench p trench
Drain To Source Voltagevdss 20 V 20 V
Continuous Drain Current Id @ 25°C 3 A 3 A
Vgsth Max @ Id 1v @ 250ua 1v @ 250ua
Rds On Max @ Id Vgs 120 m @ 2.8a,4.5v 120 m @ 2.8a,4.5v
Power Dissipation Max 1.45 W 1.45 W
Drain Source Voltage Vdss 20 V 20 V
Continuous Drain Current Id 3 A 3 A
Power Dissipation Pd 1.45 W 1.45 W
Drain Source On Resistance Rdson@Vgs Id 120 mOhms @4.5V , 2.8A 120 mOhms @4.5V , 2.8A
Gate Threshold Voltage Vgsth@Id 1 V @250uA 1 V @250uA
Type P Channel P Channel

We are delighted to provide the WPM2006-6/TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the WPM2006-6/TR and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The WPM2006-6/TR is a surface mounting dual Mosfet transistor device manufactured by Will Semiconductor. It is designed for low voltage applications that require both a high current carrying capacity and a low on-resistance. This device offers a 20V breakdown voltage and can handle up to 3A continuous drain current. It has an on-resistance of 120 mD© at 2.8A and 4.5V gate drive, and a typical gate threshold voltage of 1V at 250uA. This device is packaged in a DFN 2x2-6L RoHS compliant package for surface mounting.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Will Semicon may also be referenced as

Will Semiconductor
WILLSEMI(Will Semicon)

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