X-On Electronics has gained recognition as a prominent supplier of C3D10060G-TR Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. C3D10060G-TR Schottky Diodes & Rectifiers are a product manufactured by Wolfspeed. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

C3D10060G-TR Wolfspeed

C3D10060G-TR electronic component of Wolfspeed
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Part No.C3D10060G-TR
Manufacturer: Wolfspeed
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 600V, 10A
Datasheet: C3D10060G-TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.8525 ea
Line Total: USD 3.85 
Availability - 3386
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
19
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 3.1031
10 : USD 2.301

3386
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 3.8525
10 : USD 3.105
100 : USD 2.392
500 : USD 2.208
800 : USD 2.1965
4800 : USD 2.1505
9600 : USD 2.139

19
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 4
Multiples : 1
4 : USD 3.1031
10 : USD 2.301

   
Manufacturer
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We are delighted to provide the C3D10060G-TR from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the C3D10060G-TR and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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C3D10060G V = 600 V RRM Silicon Carbide Schottky Diode I (T =135C) = 14 A F C Z -Rec Rectifier Q = 24 nC c Features Package 600-Volt Schottky Rectifier Zero Reverse Recover y Current Zero For ward Recover y Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on V F TO-263-2 Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency PIN 1 Reduction of Heat Sink Requirements CASE Parallel Devices WithoutThermal Runaway PIN 2 Applications Part Number Package Marking Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages C3D10060G TO-263-2 C3D10060 Free Wheeling Diodes in Inver ter stages AC/DC conver ters Maximum Ratings (T = 25 C unless other wise specified) C Symbol Parameter Value Unit Test Conditions Note V Repetitive Peak Reverse Voltage 600 V RRM V Surge Peak Reverse Voltage 600 V RSM V DC Blocking Voltage 600 V DC 29 T =25C C I Continuous For ward Current 14 A T =135C Fig. 3 F C 10 T =151C C 44 T =25C, t = 10 ms, Half Sine Wave C P I Repetitive Peak For ward Surge Current A FRM 30.5 T =110C, t =10 ms, Half Sine Wave C P 90 T =25C, t = 10 ms, Half Sine Wave C p I Non-Repetitive Peak For ward Surge Current A Fig. 8 FSM 71 T =110C, t = 10 ms, Half Sine Wave C p 860 T =25C, t = 10 s, Pulse C P I Non-Repetitive Peak For ward Surge Current A Fig. 8 F,Max 680 T =110C, t = 10 s, Pulse C P 125 T =25C C P Power Dissipation W Fig. 4 tot 54 T =110C C dV/dt Diode dV/dt ruggedness 200 V/ns V =0-600V R 40.5 T =25C, t =10 ms 2 2 2 C P i dt i t value A s 25 T =110C, t =10 ms C P -55 to T , T Operating Junction and StorageTemper ature C J stg +175 1 C3D10060G Rev. H, 01-2017Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note 1.5 1.8 I = 10 A T =25C F J V For ward Voltage V Fig. 1 F 2.0 2.4 I = 10 A T =175C F J 10 50 V = 600 V T =25C R J I Reverse Current A Fig. 2 R 20 200 V = 600 V T =175C R J V = 400 V, I = 10 A R F Q Total Capacitive Charge 24 nC di /dt = 500 A/s Fig. 5 C T = 25C J 460.5 V = 0 V, T = 25C, f = 1 MHz R J C Total Capacitance 44 pF V = 200 V, T = 25C, f = 1 MHz Fig. 6 R J 40 V = 400 V, T = 25C, f = 1 MHz R J E Capacitance Stored Energy 3.6 J V = 400 V Fig. 7 C R Note: This is a majority carrier diode, so there is no reverse recover y charge. Thermal Characteristics Symbol Parameter Typ. Unit Note R Thermal Resistance from Junction to Case 1.2 C/W Fig. 9 JC Typical Performance 100 30 90 T = -55 C J 25 80 T = 25 C J 70 20 T = 75 C J T = 175 C J 60 T = 125 C J T = 125 C J 15 50 T = 175 C J T = 75 C J 40 1010 TT == 25 25 CC J 30 T = -55 C J 20 5 10 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 100 200 300 400 500 600 700 800 900 1000 0 200 400 600 800 1000 1200 Foward Voltage, V (V) Reverse Voltage, V (V) V (V) V (V) F R F R Figure 1. For ward Characteristics Figure 2. Reverse Characteristics 2 C3D10060G Rev. H, 01-2017 FFoowwaarrdd CCurrurrenentt,, II (A) I (A) F F RReevveerrssee LLeeaakkaaggee CuCurrrreenntt,, II (mA) RR I ( mA) R

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Wolfspeed / Cree
Wolfspeed(CREE)
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