C3D10060G V = 600 V RRM Silicon Carbide Schottky Diode I (T =135C) = 14 A F C Z -Rec Rectifier Q = 24 nC c Features Package 600-Volt Schottky Rectifier Zero Reverse Recover y Current Zero For ward Recover y Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on V F TO-263-2 Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency PIN 1 Reduction of Heat Sink Requirements CASE Parallel Devices WithoutThermal Runaway PIN 2 Applications Part Number Package Marking Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages C3D10060G TO-263-2 C3D10060 Free Wheeling Diodes in Inver ter stages AC/DC conver ters Maximum Ratings (T = 25 C unless other wise specified) C Symbol Parameter Value Unit Test Conditions Note V Repetitive Peak Reverse Voltage 600 V RRM V Surge Peak Reverse Voltage 600 V RSM V DC Blocking Voltage 600 V DC 29 T =25C C I Continuous For ward Current 14 A T =135C Fig. 3 F C 10 T =151C C 44 T =25C, t = 10 ms, Half Sine Wave C P I Repetitive Peak For ward Surge Current A FRM 30.5 T =110C, t =10 ms, Half Sine Wave C P 90 T =25C, t = 10 ms, Half Sine Wave C p I Non-Repetitive Peak For ward Surge Current A Fig. 8 FSM 71 T =110C, t = 10 ms, Half Sine Wave C p 860 T =25C, t = 10 s, Pulse C P I Non-Repetitive Peak For ward Surge Current A Fig. 8 F,Max 680 T =110C, t = 10 s, Pulse C P 125 T =25C C P Power Dissipation W Fig. 4 tot 54 T =110C C dV/dt Diode dV/dt ruggedness 200 V/ns V =0-600V R 40.5 T =25C, t =10 ms 2 2 2 C P i dt i t value A s 25 T =110C, t =10 ms C P -55 to T , T Operating Junction and StorageTemper ature C J stg +175 1 C3D10060G Rev. H, 01-2017Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note 1.5 1.8 I = 10 A T =25C F J V For ward Voltage V Fig. 1 F 2.0 2.4 I = 10 A T =175C F J 10 50 V = 600 V T =25C R J I Reverse Current A Fig. 2 R 20 200 V = 600 V T =175C R J V = 400 V, I = 10 A R F Q Total Capacitive Charge 24 nC di /dt = 500 A/s Fig. 5 C T = 25C J 460.5 V = 0 V, T = 25C, f = 1 MHz R J C Total Capacitance 44 pF V = 200 V, T = 25C, f = 1 MHz Fig. 6 R J 40 V = 400 V, T = 25C, f = 1 MHz R J E Capacitance Stored Energy 3.6 J V = 400 V Fig. 7 C R Note: This is a majority carrier diode, so there is no reverse recover y charge. Thermal Characteristics Symbol Parameter Typ. Unit Note R Thermal Resistance from Junction to Case 1.2 C/W Fig. 9 JC Typical Performance 100 30 90 T = -55 C J 25 80 T = 25 C J 70 20 T = 75 C J T = 175 C J 60 T = 125 C J T = 125 C J 15 50 T = 175 C J T = 75 C J 40 1010 TT == 25 25 CC J 30 T = -55 C J 20 5 10 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 100 200 300 400 500 600 700 800 900 1000 0 200 400 600 800 1000 1200 Foward Voltage, V (V) Reverse Voltage, V (V) V (V) V (V) F R F R Figure 1. For ward Characteristics Figure 2. Reverse Characteristics 2 C3D10060G Rev. H, 01-2017 FFoowwaarrdd CCurrurrenentt,, II (A) I (A) F F RReevveerrssee LLeeaakkaaggee CuCurrrreenntt,, II (mA) RR I ( mA) R