Six Channel SiC MOSFET Driver Gate Driver for 1200V SiC MOSFET Power Module Features 6 output channels Isolated power supply Direct mount low inductance design Short circuit protection Over temperature protection Under voltage protection For use with Cree Module 45mm, six-pack CCS020M12CM2 45mm, six-pack CCS050M12CM2 Part Number Package Marking Applications CGD15FB45P1 PCBA CGD15FB45P1 Driver for SiC MOSFET modules in two-level, three-phase inverter applications DC Bus voltage up to 1000VDC Absolute Maximum Ratings Note Symbol Parameter Value Unit Test Conditions V Power Supply Voltage 16 V Vs ramp rate >50V/sec s V Input signal voltage HIGH 5 V iH V Input signal voltage LOW 0 V iL I Output peak current 9 (2) A Rg limited O.pk P Ouput power per gate 1.2 W O AVG F Max. Switching frequency 250 kHz Vg=+20/-5, Rg=10 Max V Max. Drain to source voltage 1200 V DS Input to output isolation V 1200 V isol voltage Rate of change of output to dv/dt 50,000 V/s input voltage W Weight 223 g 6 MTBF Mean time between failure 1.5 10 h T Operating temperature -35 to 85 C op T Storage temperature -40 to 85 C stg 1 CGD15FB45P1 Rev - , 10/2015 Characteristics Value Symbol Parameter Unit Test Conditions Notes Min Typ Max V Supply voltage 14 15.0 16 V S V Input signal voltage on/off 5/0 V i 25C Supply current (no load) 230 f=100khz, 25C I Supply current (max.) 460 mA SO f=250khz, 25C Supply current (max.) 780 Input threshold voltage V 3.5 V iT+ HIGH Input threshold voltage V 1.5 V iT- LOW R Input resistance 48 k in C Coupling capacitance 30 pf io Time from when input pin T Turn on propogation delay 300 nS goes high until driver output Fig. 3, 4 don goes high Time from when input pin goes low until driver output Fig. 3, 4 T Turn off propogation delay 300 nS doff goes low V time from 10% to 90% OUT T Output voltage rise time 65 nS with R = 0ohms, C = Fig. 5 G LOAD Rout 40,000pf V time from 90% to 10% OUT T Output voltage fall time 50 nS with R = 0ohms, C = Fig. 5 Fout G LOAD 40,000pf R Turn-on gate resistor 10 GON R Turn-off gate resistor 10 GOFF V Gate voltage at turn-on +20 V GATEON V Gate voltage at turn-off -5 V GATEOFF Total time from when short Short Circuit Response T 2.34 S circuit current begins flowing SC Time until it is interrupted V value that causes the DS V V monitoring threshold 4.7 V DS,TRIP DS driver to trip on overcurrent Time from when desat T Fault Delay Time 425 nS pin=9V until the gate output FLT DLY begins turning off Time delay from desat Transmission delay of fault pin=9V until fault status pin T 2.25 S FLT SIG state is pulled low Time reset pin must be held Pulse width for resetting T 800 nS err low to reset driver fault Test voltage (60Hz/1min), 4000 V Primary to secondary Test voltage (60Hz/1min), 4000 V Secondary to secondary Creepage distance, Primary 9.0 mm to secondary Creepage distance, 7.0 mm Secondary to secondary Clearance distance, 6.0 mm Primary to secondary Clearance distance, 7.0 mm Secondary to secondary 2 CGD15FB45P1 Rev - , 10/2015