CGHV35400F 400 W, 2.9 - 3.5 GHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Description Crees CGHV35400F is a gallium nitride (GaN) high electron mobility transistor (HEMT)designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35400F ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is matched to 50-ohms on the input and 50-ohms on the output. The CGHV35400 is based on Crees high power density 50 V, 0.4 m GaN on silicon carbide PN: CGHV35400F Package Type: 440225 (SiC) foundry process. The transistor is supplied in a ceramic/ metal flange package, type 440225. Typical Performance Over 2.9-3.5 GHz (T = 25C) of Demonstration Amplifier C Parameter 2.9 GHz 3.2 GHz 3.5 GHz Units Output Power 500 535 480 W Gain 11.0 11.3 10.8 dB Drain Efficiency 74 69 64 % Note: Measured in the CGHV35400F-AMP application circuit, under 500 s pulse width, 10% duty cycle, P = 46 dBm. IN Features 2.9 - 3.5 GHz Operation 500 W Typical Output Power 11 dB Power Gain 70% Typical Drain Efficiency 50 Ohm Internally Matched <0.3 dB Pulsed Amplitude Droop Large Signal Models Available for ADS and MWO Rev 5.2 - February 2021 4600 Silicon Drive Durham, NC 27703 wolfspeed.comCGHV35400F 2 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Pulse Width PW 500 s Duty Cycle DC 10 % Drain-Source Voltage V 150 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 80 mA 25C GMAX 1 Maximum Drain Current I 24 A 25C DMAX 2 Soldering Temperature T 245 C S Screw Torque 40 in-oz Pulsed Thermal Resistance, Junction to Case R 0.22 C/W 100 sec, 10%, 85C , P = 418 W JC DISS Pulsed Thermal Resistance, Junction to Case R 0.30 C/W 500 sec, 10%, 85C, P = 418 W JC DISS Case Operating Temperature T -40, +125 C C Notes: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at wolfspeed.com/rf/document-library Electrical Characteristics Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics (T = 25C) C Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 83.6 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 50 V, I = 0.5 A GS(Q) DC DS D 2 Saturated Drain Current I 62.7 75.5 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 125 V V = -8 V, I = 83.6 mA BR DC GS D Notes: 1 Measured on wafer prior to packaging 2 Scaled from PCM data Rev 5.2 - February 2021 4600 Silicon Drive Durham, NC 27703 wolfspeed.com